C3074 PDF даташит
Спецификация C3074 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC3074». |
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Детали детали
Номер произв | C3074 |
Описание | NPN Transistor - 2SC3074 |
Производители | Toshiba Semiconductor |
логотип |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
• High speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
2SC3074
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = 1 V, IC = 3 A
IC = 3 A, IB = 0.15 A
IC = 3 A, IB = 0.15 A
VCE = 4 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 1 μA
― ― 1 μA
50 ― ―
V
70 ― 240
30 ― ―
― 0.2 0.4
V
― 0.9 1.2
V
― 120 ― MHz
― 80 ― pF
Turn-on time
Switching time Storage time
ton 20 μs
IB1 OUTPUT ― 0.1 ―
INPUT
tstg IB2 IB2
― 1.0 ―
μs
VCC = 30 V
Fall time
tf IB1 = 0.15 A , IB2 = 0.15 A
Duty cycle ≤ 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
― 0.1 ―
C3074
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2 2010-08-27
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IC – VCE
10
Common emitter
8
100 90
80
Tc = 25°C
70
60
6 50
40
4 30
20
2 IB = 10 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE – IC
1.0
0.8
IB = 10 mA
0.6
20
Common emitter
Tc = 100°C
40 60 80 100
120
150
0.4
200
500
0.2
0
01 23456 7
Collector current IC (A)
2SC3074
1.2
1.0
0.8 IB = 10 mA
20
0.6
0.4
0.2
VCE – IC
Common emitter
Tc = 25°C
40 60 80
100
150
200
300
500
0
01234567
Collector current IC (A)
1.2
1.0
0.8 IB = 20 mA
40
0.6
0.4
0.2
VCE – IC
Common emitter
Tc = −55°C
120 160 200
250
300
500
0
01 23456 7
Collector current IC (A)
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 1 V
Tc = 100°C
25
−55
10
0.03
0.1 0.3 1 3
Collector current IC (A)
10
1
Common emitter
0.5 IC/IB = 20
0.3
VCE (sat) – IC
Tc = −55°C
0.1
25
0.05
0.03
100
0.01
0.03
0.1 0.3 1 3
Collector current IC (A)
10
3 2010-08-27
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