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Datasheet MJ15015 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJ15015 | Silicon Epitaxial Planar Transistor MJ15015
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, high power transistors in a metal envelope, primarily for use in audio and general purpose
TO-3
QUICK REFERENCE DATA
SYMBOL
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak va |  Wing Shing Computer Components | transistor |
| 2 | MJ15015 | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 120 VOLTS 115 / 180 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3055A/D
Complementary Silicon High-Power Transistors
. . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits suc |  Motorola Semiconductors | transistor |
| 3 | MJ15015 | COMPLEMENTARY SILICON POWER TRANSISTORS 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon High−Power Transistors
These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power sw |  ON | transistor |
| 4 | MJ15015 | POWER TRANSISTORS(15A) A
A
A
A
|  Mospec | transistor |
| 5 | MJ15015 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |  Boca | transistor |
MJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MJ1000 | Medium-Power Complementary Silicon Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ1000/D
Medium-Power Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction wi  Motorola Inc transistor | | |
| 2 | MJ1000 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ1000/1001
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier appli  SavantIC transistor | | |
| 3 | MJ1000 | (MJ1000 / MJ1001) Complementary Power Darlingtons NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the  Comset Semiconductors data | | |
| 4 | MJ1000 | Trans GP BJT NPN 60V 8A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor data | | |
| 5 | MJ10000 | POWER TRANSISTORS(20A/350-400V/175W) A
A
A
A
 Mospec Semiconductor transistor | | |
| 6 | MJ10000 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ10000/D
MJ10000
Designer's
SWITCHMODE Series NPN Silicon Power Darlington Transistor
The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. I Motorola Inc transistor | | |
| 7 | MJ10000 | NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) MJ10000
NPN
SILICON TRANSISTOR
SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
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