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Datasheet 3N163 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3N163 | P-CHANNEL ENHANCEMENT MODE 3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
Linear Integrated Systems
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transi |  Linear Integrated Systems | data |
| 2 | 3N163 | High Speed Switch 3N163 P-CHANNEL MOSFET
The 3N163 is an enhancement mode P-Channel Mosfet
The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. FEATURES |  Micross | data |
| 3 | 3N163 | Trans MOSFET P-CH 40V 0.05A 4-Pin TO-72 |  New Jersey Semiconductor | mosfet |
| 4 | 3N163-4 | P-CHANNEL ENHANCEMENT MODE 3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
Linear Integrated Systems
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transi | Linear Integrated Systems | data |
3N1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3N100E | MTB3N100E MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package whi  Motorola Semiconductors data | | |
| 2 | 3N121 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 3 | 3N123 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 4 | 3N128 | MOSFET AMPLIFIER MAXIMUM RATINGS
Rating Drain-Source Voltage
Drain-Gate Voltage Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol vDs vDg vgs
id
Pd
Tj, Tstg
Value + 20 + 20 ±10 50 330 2.2
-65 to +175
Unit
Vdc Vdc Vdc Motorola Semiconductors amplifier | | |
| 5 | 3N128 | Silicon MOS Transistor General Electric Solid State transistor | | |
| 6 | 3N128 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 7 | 3N129 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | |
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