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даташит K4075 PDF ( Datasheet )

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Номер произв K4075
Описание MOS FIELD EFFECT TRANSISTOR
Производители NEC
логотип NEC логотип 



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K4075 Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4075
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4075 is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4075-ZK-E1-AY
Pure Sn (Tin)
2SK4075-ZK-E2-AY
PACKING
Tape
2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
Low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
Low Ciss: Ciss = 2900 pF TYP.
Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±180
A
A
Total Power Dissipation (TC = 25°C) PT1 52 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS 28 A
EAS 78 mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C) 2.4 °C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18223EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006









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K4075 Даташит, Описание, Даташиты
2SK4075
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
<R>
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 15 A
VGS = 10 V, ID = 30 A
RDS(on)2 VGS = 4.5 V, ID = 15 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V
Rise Time
tr ID = 30 A
Turn-off Delay Time
td(off)
VGS = 10 V
Fall Time
tf RG = 0 Ω
Total Gate Charge
QG VDD = 32 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 60 A
IF = 60 A, VGS = 0 V
Reverse Recovery Time
trr IF = 60 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
1 μA
±100 nA
1.5 2.0 2.5
V
9.3 S
5.2 6.7 mΩ
7.2 10 mΩ
2900
pF
450 pF
293 pF
18 ns
16 ns
54 ns
9 ns
54 nC
11 nC
15 nC
0.9 1.5
V
33 ns
33 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18223EJ2V0DS









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K4075 Даташит, Описание, Даташиты
2SK4075
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(on) Limited
(VGS = 10 V)
ID(pulse)
PW = 100 μs
ID(DC)
10 DC
Power Dissipation
1 Limited
TC = 25°C
Single Pulse
10 ms
1 ms
0.1
0.1 1 10
VDS - Drain to Source Voltage - V
100
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 2.4°C/W
1
0.1
0.01
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
10
Single Pulse
100 1000
Data Sheet D18223EJ2V0DS
3










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