PFF13N50 Datasheet PDF - Power Device
| Part Number | PFF13N50 | |
| Description | 500V N-Channel MOSFET | |
| Manufacturers | Power Device | |
| Logo |  |
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There is a preview and PFF13N50 download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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Feb 2009
FEATURES
Originative New Design
100% EAS Test
Rugged Gate Oxide Technology
Extremely Low Intrinsic Capacitances
Remarkable Switching Characteristics
Unequalled Gate Charge : 28 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half
bridge topology
PFC (Power Factor Correction)
SMPS (Switched Mode Power Supplies)
PFP13N50/PFF13N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on)typ = 0.46 Ω
ID = 12.5 A
Drain {
Gate
{
●
◀▲
●
●
Source
{
TO-220
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
PFP13N50
PFF13N50
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
12.5 12.5*
7.9 7.9*
50 50*
±30
810
12.5
17
5.5
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
170 56
1.35 0.45
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
PFP13N50
0.74
0.5
62.5
PFF13N50
2.23
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
Feb 2009
Power Device REV.A1
|
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Typical Characteristics (continued)
100
D =0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
10-2 single pulse
※ N otes :
1 . Z θ JC(t) = 0 .7 4 ℃ /W M a x .
2. D uty Factor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 12. Transient Thermal Response Curve for PFP13N50
100 D =0.5
0.2
0.1
1 0 -1
0.05
0.02
0.01
10-2 single pulse
※ N otes :
1 . Z θ JC(t) = 2 .2 3 ℃ /W M a x.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 13. Transient Thermal Response Curve for PFF13N50
Feb 2009
Power Device REV.A1
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PFF13N50 electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ PFF13N50.PDF Datasheet ] | |
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