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MwT-LN600 PDF даташит

Спецификация MwT-LN600 изготовлена ​​​​«MWT» и имеет функцию, называемую « 26 GHz Super Low Noise pHEMT Device».

Детали детали

Номер произв MwT-LN600
Описание 26 GHz Super Low Noise pHEMT Device
Производители MWT
логотип MWT логотип 

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MwT-LN600 Даташит, Описание, Даташиты
MwT-LN600
26 GHz Super Low Noise pHEMT Device
May 2010
FEATURES
0.50 dB Minimum Noise Figure at 12 GHz
8.0 dB Associated Gain at 12 GHz
20.0 dBm P1dB at 12 GHz
0.15 Micron x 600 Micron Gate
APPLICATIONS
Excellent Choice for Super Low Noise Applications
Ideal for Commercial, Military, Hi-Rel Space Applications
DESCRIPTION
The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and
600 micron gate width make it ideally suited for applications requiring very low noise and high associated gain up to 20
GHz. The device is equally effective for wideband (e.g. 6 to 18 GHz) and narrow-band applications. Each wafer can be
screened to meet quality and reliability requirements of space and military applications.
RF SPECIFICATIONS AT Ta = 25 C
S YM BO L
PARAMETERS & CONDITIONS
FREQ UNITS
MIN
TYP
NF min
M inim um Noise Figure
V ds= 2.5V Ids = 40 m A (V gs = 0)
4 GHz
12 GHz
dB
0.2
0.5
SSG
Associated Gain
V ds= 2.5V Ids = 40 m A (V gs = 0)
4 GHz
12 GHz
dB
11.0
8.0
12.0
9.0
P1dB
Output P ower at 1dB Com pression
V ds= 3.0V Ids = 100 m A
12 GHz
dBm
20.0
Note: MWT-LN600 is a quas i enhanc ement mode dev ic e. For bes t nois e f igure, V gs bias v oltage s hould be s et at
either 0 or s lightly pos itiv e v oltages to ac hiev e the target operating c urrent.
DC SPECIFICATIONS AT Ta = 25 C
S YM BO L
Im a x
Gm
Vp
BVGSO
BVGDO
PARAMETERS & CONDITIONS
M axim um Current
Vds = 2.5V Vgs = 0.6V
Trans c onduc tanc e
Vds = 2.5V Vgs = 0.2V
P inch-off V oltage
V ds = 2.0V Ids = 1.0m A
Gate-to-Source Breakdown Voltage
Igs = -0.6m A
Gate-to-Drain Breakdown Voltage
Igd = -0.6m A
Rth *
Chip Therm al Res is tanc e
* Ov erall Rth depends on c hip mounting
FREQ
UNITS
mA
mS
V
V
V
ºC/W
MIN
150
300
-6.0
-7.5
TYP
175
400
-0.2
-8.0
-9.0
85
MAX
MAX
250
4268 Solar Way
Fremont, CA 94538
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com









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MwT-LN600 Даташит, Описание, Даташиты
NOISE PARAMETERS Vds=2.5V, Ids=50mA
MwT-LN600
26 GHz Super Low Noise pHEMT Device
May 2010
S-PARAMETERS Vds=2.5V, Ids=50mA
Chip Dimensions: 490 x 430 microns
Source pad: 100 x 300
Gate and Drain pad: 80 x 90
Chip Thickness: 100 microns
Gold Block
10X10X5
2 places
RECOMMENDED ASSEMBLY CONFIGURATION
Bond Wire
1.0 mil die
10 places
4268 Solar Way
Fremont, CA 94538
Note: The gold blocks and circuits should be
placed as close to the device as possible. The
bond wire should be as short as possible.
MAXIMUM RATINGS at Ta = 25 C
Cont Absolute
Sym bol
Param eters
Units
Max 1
Max 2
VDS Drain to Source Voltage
V
4.5 5.5
Tch Channel Temperature
ºC
+150
+175
Tst Storage Temperature
ºC -65 to +160 +180
Pin RF Input Pow er
mW 30
50
Pt Total Pow er Dissipation
mW
500
600
Exceeding any on of these limits in continuous operation may reduce the
mean-time-to-failure below the design goal and may cause permanent damage
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com









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MwT-LN600 Даташит, Описание, Даташиты
Gm & Ids vs. Vgs
Vds = 2.5V
MwT-LN600
26 GHz Super Low Noise pHEMT Device
May 2010
NF & Associated Gain vs. Freq
Vds = 2.5V, Ids = 50mA
NF & Ga vs. Ids
Freq = 12GHz, Vds = 2.5V
DC IV Characteristics
4268 Solar Way
Fremont, CA 94538
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com










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MwT-LN600 26 GHz Super Low Noise pHEMT DeviceMWT
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