D357 PDF даташит
Спецификация D357 изготовлена «INCHANGE» и имеет функцию, называемую «Silicon NPN Power Transistor». |
|
Детали детали
Номер произв | D357 |
Описание | Silicon NPN Power Transistor |
Производители | INCHANGE |
логотип |
2 Pages
No Preview Available ! |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD357
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Good Linearity of hFE
·Complement to Type 2SB527
APPLICATIONS
·Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
100 V
5V
IC Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
0.8 A
1
W
10
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.cn
1
No Preview Available ! |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD357
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA
VBE(on) Base-Emitter On Voltage
IC= 50mA; VCE= 4V
ICBO Collector Cutoff Current
VCB= 25V; IE= 0
ICEO Collector Cutoff Current
VCE= 100V; RBE= ∞
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 0.3A; VCE= 4V
MIN TYP. MAX UNIT
100 V
110 V
5V
1.0 V
0.7 V
10 μA
1 mA
10 μA
55 300
hFE Classifications
CD
E
55-110 90-180 150-300
isc website:www.iscsemi.cn
2
Скачать PDF:
[ D357.PDF Даташит ]
Номер в каталоге | Описание | Производители |
D353M3D | (D359M3D / D353M3D) 3.5 Compact Floppy Disk Drive | Mitsumi |
D356A | Electroluminescent Lamp Driver IC | Durel |
D357 | Silicon NPN Power Transistor | INCHANGE |
D358 | NPN Transistor - 2SD358 | ETC |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |