C2120 PDF даташит
Спецификация C2120 изготовлена «Bluecolour» и имеет функцию, называемую «NPN Silicon Epitaxial Planar Transistor». |
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Детали детали
Номер произв | C2120 |
Описание | NPN Silicon Epitaxial Planar Transistor |
Производители | Bluecolour |
логотип |
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2SC2120 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into two groups, O
and Y according to its DC current gain.
On special request, these transistors can
be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
TS
Value
35
30
5
800
160
600
150
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
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7/15/2011
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Characteristics at Tamb=25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=1V, IC=100mA
Current Gain Group O
hFE
100
-
200
-
Y hFE
160
-
320
-
at VCE=1V, IC=700mA
hFE 35
-
-
-
Collector Cutoff Current
at VCB=35V
ICBO
-
- 0.1 μA
Emitter Cutoff Current
at VEB=5V
IEBO
-
- 0.1 μA
Collector Emitter Saturation Voltage
at IC=500mA, IB=20mA
Transition Frequency
VCE(sat)
-
- 0.5 V
at VCE=5V, IC=10mA
Base Emitter Voltage
fT - 120 - MHz
at IC=10mA, VCE=1V
Collector Output Capacitance
VBE 0.5 - 0.8 V
at VCB=10V, f=1MHz
Collector Emitter Breakdown Voltage
COB
-
13
-
pF
at IC=10mA
VCEO
30
-
-
V
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Ta=25℃
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Номер в каталоге | Описание | Производители |
C2120 | NPN Transistor | JIANGSU CHANGJIANG |
C2120 | Silicon NPN Epitaxial Type Transistor | Toshiba Semiconductor |
C2120 | NPN Plastic Encapsulated Transistor | SeCoS |
C2120 | Silicon NPN Transistor | INCHANGE |
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