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STD4N80K5 PDF даташит

Спецификация STD4N80K5 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «N-CHANNEL MOSFET».

Детали детали

Номер произв STD4N80K5
Описание N-CHANNEL MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STD4N80K5 Даташит, Описание, Даташиты
STD4N80K5, STF4N80K5,
STP4N80K5, STU4N80K5
N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH™ 5
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
TAB
3
2
1
TO-220
IPAK
3
2
1
Figure 1. Internal schematic diagram
' 7$%
Features
Order codes VDS RDS(on) max ID
STD4N80K5
STF4N80K5
800 V
STP4N80K5
2.5 Ω
3A
STU4N80K5
Outstanding RDS(on) * area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
PTOT
60 W
20 W
60 W
Applications
Switching applications
* 
6 
AM01476v1
Description
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
Order code
STD4N80K5
STF4N80K5
STP4N80K5
STU4N80K5
Table 1. Device summary
Marking
Packages
4N80K5
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2013
This is information on a product in full production.
DocID025105 Rev 2
1/23
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STD4N80K5 Даташит, Описание, Даташиты
Contents
Contents
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23 DocID025105 Rev 2









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STD4N80K5 Даташит, Описание, Даташиты
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
DPAK,
IPAK
TO-220FP
TO-220
Unit
VDS Drain-source voltage
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(2)
IDM Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-
IAR repetitive (pulse width limited by TJ max)
EAS
(3)
dv/dt
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
(4)
dv/dt MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s, TC = 25 °C)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD < 3 A, di/dt < 100 A/μs, peak VDS(peak) V(BR)DSS
4. VDS 640 V
60
800
±30
(1)
3
(1)
1.7
(1)
12
20
1
74.5
4.5
50
2500
60
-55 to 150
V
A
A
A
W
A
mJ
V/ns
V/ns
V
°C
°C
Symbol
Table 3. Thermal data
Parameter
DPAK,
IPAK
Value
TO-220FP
TO-220
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
2.08
50
6.25 2.08
62.5
°C/W
°C/W
°C/W
DocID025105 Rev 2
3/23
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Номер в каталогеОписаниеПроизводители
STD4N80K5N-CHANNEL MOSFETSTMicroelectronics
STMicroelectronics

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