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STU4N52K3 PDF даташит

Спецификация STU4N52K3 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «N-channel Power MOSFET».

Детали детали

Номер произв STU4N52K3
Описание N-channel Power MOSFET
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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STU4N52K3 Даташит, Описание, Даташиты
STD4N52K3, STF4N52K3,
STP4N52K3, STU4N52K3
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
VDSS
RDS(on)
max
ID
Pw
STD4N52K3
STF4N52K3
STP4N52K3
STU4N52K3
525 V
< 2.6 Ω
2.5 A 45 W
2.5 A 20 W
(1)
2.5 A 45 W
2.5 A 45 W
1. Limited by package
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
Application
Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STD4N52K3
STF4N52K3
STP4N52K3
STU4N52K3
Marking
4N52K3
4N52K3
4N52K3
4N52K3
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2013
This is information on a product in full production.
Doc ID 18206 Rev 2
1/21
www.st.com
21









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STU4N52K3 Даташит, Описание, Даташиты
Contents
Contents
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 Doc ID 18206 Rev 2









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STU4N52K3 Даташит, Описание, Даташиты
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 DPAK IPAK TO-220FP
VDS Drain-source voltage (VGS = 0)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(2)
IDM Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-
IAR repetitive (pulse width limited by Tj max)
EAS
(3)
dv/dt
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
Peak diode recovery voltage slope
525
± 30
2.5
2
10
45
1.3
110
12
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
-55 to 150
Tj Max. operating junction temperature
150
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD 2.5 A, di/dt = 400 A/μs, peak VDD V(BR)DSS, VDD = 80% V(BR)DSS.
(1)
2.5
(1)
2
(1)
10
20
2500
V
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 DPAK IPAK TO-220FP
Rthj-case Thermal resistance junction-case max
(1)
Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
Maximum lead temperature for soldering
Tl purpose
62.5
300
1. When mounted on 1inch sq FR-4 board, 2 oz Cu
2.78
50
6.25
100 62.5
300
°C/W
°C/W
°C/W
°C
Doc ID 18206 Rev 2
3/21










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Номер в каталогеОписаниеПроизводители
STU4N52K3N-channel Power MOSFETSTMicroelectronics
STMicroelectronics

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