STU7N80K5 PDF даташит
Спецификация STU7N80K5 изготовлена «STMicroelectronics» и имеет функцию, называемую «N-channel Power MOSFET». |
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Детали детали
Номер произв | STU7N80K5 |
Описание | N-channel Power MOSFET |
Производители | STMicroelectronics |
логотип |
21 Pages
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STD7N80K5, STP7N80K5,
STU7N80K5
N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - production data
TAB
23
1
DPAK
TAB
TAB
3
2
1
TO-220
IPAK
3
2
1
Features
Order codes
STD7N80K5
STP7N80K5
STU7N80K5
VDS
800 V
RDS(on)max
1.2 Ω
ID PTOT
6 A 110 W
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
D(2, TAB)
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
Order codes
STD7N80K5
STP7N80K5
STU7N80K5
Table 1. Device summary
Marking
Package
7N80K5
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
October 2013
This is information on a product in full production.
DocID023448 Rev 5
1/21
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Contents
Contents
STD7N80K5, STP7N80K5, STU7N80K5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 DocID023448 Rev 5
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STD7N80K5, STP7N80K5, STU7N80K5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VGS
ID
ID
IDM (1)
PTOT
IAR
EAS
dv/dt (2)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Max current during repetitive or single
pulse avalanche
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
Peak diode recovery voltage slope
Tj Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS
± 30
6
3.8
24
110
2
88
4.5
-55 to 150
Unit
V
A
A
A
W
A
mJ
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
DPAK
50
Value
TO-220
1.14
62.5
IPAK
100
Unit
°C/W
°C/W
°C/W
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3/21
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STU7N80K5 | N-channel Power MOSFET | STMicroelectronics |
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