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IRLB4132PbF PDF даташит

Спецификация IRLB4132PbF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRLB4132PbF
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

9 Pages
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IRLB4132PbF Даташит, Описание, Даташиты
Approved
(Not Released)
PD - TBD
IRLB4132PbF
Applications
l Optimized for UPS/Inverter Applications
l Low Voltage Power Tools
Benefits
l Best in Class Performance for UPS/Inverter
Applications
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
VDSS
30V
G
Gate
HEXFET® Power MOSFET
RDS(on) max Qg
3.5m
36nC
D
DS
G
TO-220AB
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
hMaximum Power Dissipation
hMaximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
hJunction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
gJunction-to-Ambient
Max.
30
± 20
f150
100
78
620
140
68
0.90
-55 to + 175
300 (1.6mm from case)
x10lbfxin (1.1N m)
Typ.
–––
0.5
–––
Max.
1.11
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through † are on page 9
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1
03/27/09









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IRLB4132PbF Даташит, Описание, Даташиты
IRLB4132PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
17
2.5
3.5
1.8
-7.7
–––
–––
–––
–––
–––
36
9.1
4.2
13
13
17.2
21
0.85
23
92
25
36
5110
960
440
Max. Units
Conditions
–––
–––
3.5
4.5
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 40A
VGS = 4.5V, ID = 32A
V
mV/°C
VDS
=
VGS,
ID
=
100µA
1.0
100
100
-100
–––
54
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 32A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 32A
–––
–––
––– nC VDS = 16V, VGS = 0V
1.5
e––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 32A
RG = 1.8
–––
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
iEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
–––
Max.
310
900
32
14
Units
mJ
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
f––– ––– 150
MOSFET symbol
––– –––
A
showing the
integral reverse
620
––– ––– 1.0
ep-n junction diode.
V TJ = 25°C, IS = 32A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
e––– 29 44 ns TJ = 25°C, IF = 32A, VDD = 15V
––– 49 74 nC di/dt = 200A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLB4132PbF Даташит, Описание, Даташиты
IRLB4132PbF
1000
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
60µs PULSE WIDTH
Tj = 25°C
10
0.1
3.0V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
3.0V
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
2.0
ID = 78A
VGS = 10V
1.5
10
VDS = 15V
60µs PULSE WIDTH
1.0
12345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3










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Номер в каталогеОписаниеПроизводители
IRLB4132PbFPower MOSFET ( Transistor )International Rectifier
International Rectifier

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