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2N1039 PDF даташит

Спецификация 2N1039 изготовлена ​​​​«New Jersey Semi-Conductor» и имеет функцию, называемую «PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS».

Детали детали

Номер произв 2N1039
Описание PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS
Производители New Jersey Semi-Conductor
логотип New Jersey Semi-Conductor логотип 

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2N1039 Даташит, Описание, Даташиты
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
2N1038, 2N1039*. ?N1040- 2N1041*
2N2552, 2N2553*, 2N2554, 2N2555*
2N2556,, 2N2557*, 2N2558, 2N2559*
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
A
B
C
PNP GERMANIUM ALLOY
JUNCTION POWER
These hermetically sealed and dynamically tested units are designedto switch reactive
and resistive loads at maximum efficiency by using a unique internal heat-sink design.
Each unit can dissipate up to .4 watt in free air at 25°C and up to 1 watt in forced air
at 25°C and can also be pressed into suitable heat-sink wells to dissipate up to 8 watts
at 71°C. Typical applications include relay drivers, pulse amplifiers, audio amplifiers and
high current switching circuits. The collector lead is internally connected to the case.
MAXIMUM DESIGN LIMITS
Collector-to-Base Voltage, Vci
Collector-to-Emitter Voltage, VCE
Acting Region Emitter Forward Biased
Cutoff Region Emitter Reverse Biased
Emitter-to-Base Voltage, Vf,
Collector Current, Ic
Base Current, l>
Operating and Junction Temp. L
Thermal Resistance, Junction to Free Air e JA
Thermal Resistance, Junction to Case e JC
2N1038
2N2552
2N2556
-40
-30
—40
2N1039
2N2553
2N2557
-60
2N1040 2N1041
2N2554 'MUSS
2N2551 2N3559 Unjts
-80 -100 Volts
-40
-60
-50
-80
-20
-3.0
-1.0
-55 to + 100
185
3.67
-60
-100
Volts
Volts
Volts
Amp
Amp
°C
°C/W
°C/W
CHARACTERISTICS
Parameter
Current Gain, Common Emitter
Current Gain, Common Emitter
Base-to-Emitter Voltage
Base-to-Emitter Voltage
AT 2i5 C CASE
Symbol
HFEI
HFEJ
Yw
V.E2
Condition
Vcf=-0.5V,lc=-lA
VCE=- 0.5V, lc=-50mA
VCE=-0,5V, IC=-1.0A
VCE= -0.5V, lc= -50mA
Collector-Emitter Saturation Voltage*
VCE (sat)
Collector Junction Leakage Current
2N1038. 2N2552. 2N2556
2N1039, 2N2553, 2N2557
2N1040, 2N2S54, 2N25S8
2N1041. 2N2555. 2N2559
Icio
Collector-Base Breakdown Voltage
2N1038. 2N2552. 2N2556
2N1039, 2N2553, 2N2557
2N1040. 2N2S54, 2N2558
2N1041. 2N2S55. 2N2559
BVc,o
Collector Cutoff Current
2N1038, 2N2552, 2N2556
2N1039, 2N2553, 2N2557
2N1040. 2N2S54, 2N2558
2N1041, 2N255S, 2N2559
ICEX
•Nttit MMjnn* idjictit ti hufer t« niiimizi leH effect*.
lc=-l A,I8=-100 ;!••">
Vc,'=-30V
lc=-750
VBt=+0.2V
VCE- -40V
VCE =- 60V
VCE = -80V
VcE=-100V
TEMPERI ATURE
Mln. Max. Units
20 60
33 200 —
-1.0 Volts
1.0 mhos
-0.35 Volts
0.143 mhos
0.25 Volts
-125 /tAmp
-40
-60
-80
-100
Volts
-650
-
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information mmished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of eoing to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovt*red in its use. NI
Semi-Conductors encourages customers to verify that datasheets are current before placing order;.









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2N1039 Даташит, Описание, Даташиты
CHARACTERISTICS AT 25PC CASE
Parameter
Symbol
Condition
Collector Cutoff Current
2N1038. 2N2552, 2N2556
2N1039, 2N2553, 2N25S7
2N1040, 2N2554, 2N2SS8
2N1041, 2N255S, 2N2559
lew
li-O, VC£=-15V
I.-0, VcE=-20V
l,=0, VCE — 25V
|,=0,VCE — 30V
Collector Emitter Breakdown
Voltage
2N1038, 2N2S52, 2N2556
2N1039, 2N2553, 2N2557
2N1040, 2N2554, 2N2558
2N1041, 2N2555, 2N2S59
Emitter-Junction Leakage Current
Emitter-Base Breakdown Voltage
VCEO (SUS)
loo
BVEIO
lc= 100mA
VB — 20V
lE=750/uAmps
TEMPERATURE
Mln. Max. Unit*
-25
-20
-20
-20
mA
-30
-40
-50
-60
20
-650
Volts
0Amp
Volts
CHARACTERISTICS AT 8S°C CASE TEMPERATURE
Parameter
Collector Cutoff Current
2N1038, 2N2S52, 2N2556
2N1039, 2N2553, 2N2557
2N1040, 2N2S54, 2N25S8
2N1041, 2N2555, 2N2559
Symbol
Ice*
Condition
V,e= +0.2V
VCE 20V
VCE=-30V
VCE — 40V
VCE =- 50V
Mln. Max. Units
-5.0 mA
DYNAMIC CHACTERISTICS
Parameter
Magnitude of Common Emitter
Small-Signal Short-Circuit
Forward Current Transfer Ratio, h,.
Common Emitter Small-Signal
Short-Circuit Forward Current
Transfer Ratio, h(.
Condition
Mln. Max. Units
VcE=-0.5V, IC=0.5A
f= 112.5 kc
V=-1.5V, IC=-0.5A
f=lkc
72 —
Environmental Characteristics
In addition to meeting the degradation limits imposed by MIL-S-19500/
89C, these units exhibit the following more rigid environmental require-
ments.
1. A typical decrease in HFE of less than 10% at 100°C storage for
1000 hours (lc.= -1 amp and VCE= - ViV).
2. Typical Hh @ 100C°C storage dips to a minimum gain level at 500
hours and stabilizes out to 1000 hours.
3. A typical increase in HFE of less than 15% after 100°u OMr»tfo(£
for 1000 hours. (lc= -1 amp and V«- - V4V).
"
4. Typical HFE at 100°C operation rises to a maximum level ai 100
hours and stabilizes out to 1000 hours.
5. Typical 1,^ at 100°C operation stabilizes at an average reduction
of 15% at 1000hours. Most of this decrease occurs In the first
100 hours."
"When device! are used in applications which require prolonged exposure at 100*0,
optimum stability is obtained when maintained in an operating mod*, ("on" or
"off" condition).
MECHANICAL DATA
H.ICTHICAI. ISOLATION WA1NUS (OPTIONAL!
*«,«» ±0.010 O.D. X O.JOO I.O.SHOULMi MA 0551
* 2.044 MAX-
COUICTOt
'(COMMON TO CASH
•0,OM
IMITTH
O.OH DIA ± 0.001
O.OM
rt-20 UW.2A THO.
UNLESS OTHERWISE NOTED ALL
DIMENSIONS WILL DC ± 0.005
> H-» UNf-U THO.
. MOU
HOU SHAU
ir ISOLATION WAIWIIS All UUB THI
CHASSIS HOU SHALL II I/K OlAMITtl
in *•.•)!-•
l' UM
-
••A * »«H t*4—i
-i.« i=L
COUICTOR COMMON TO CASI
HOLI IN HEAT SINK NIAR
THREAD IS TOR AIR RILIIF










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