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PDF AUIRGP50B60PD1E Data sheet ( Hoja de datos )

Número de pieza AUIRGP50B60PD1E
Descripción WARP2 SERIES IGBT
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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AUTOMOTIVE GRADE
PD - 96306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
Automotive HEV and EV
PFC and ZVS SMPS Circuits
Features
Low VCE(ON) NPT Technology, Positive Temperature
Coefficient
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61m
ID (FET equivalent) = 50A
E
C
G
TO-247AC
AUIRGP50B60PD1
G
C
E
C
G
TO-247AD
AUIRGP50B60PD1E
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
600
75 h
45
150
150
40
15
60
±20
390
156
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
––– ––– 0.32
––– ––– 1.7
––– 0.24 –––
––– –––
40
––– 6.0 (0.21) –––
°C/W
g (oz)
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/02/10

1 page




AUIRGP50B60PD1E pdf
AUIRGP50B60PD1/AUIRGP50B60PD1E
900
800 TJ = 25°C
700 TJ = 125°C
600
500
400
300
200 TJ = 125°C
100
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
10
9
8
7
6
ICE = 15A
ICE = 33A
5 ICE = 50A
4
3
2
1
0 5 10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
20
1200
1000
800
EON
600
EOFF
400
200
0
0 10 20 30 40 50 60
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
www.irf.com
10
9
8
7
6
5
4
3
2
1
0
100
ICE = 15A
ICE = 33A
ICE = 50A
5 10 15
VGE (V)
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
20
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
1000
tdOFF
100
tF
tdON
10
0
tR
10 20 30 40 50 60
IC (A)
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
5

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AUIRGP50B60PD1E arduino
AUIRGP50B60PD1/AUIRGP50B60PD1E
TO-247AC Package Outline
Dimensions are shown in milimeters (inches)
TO-247AC Part Marking Information
Part Number
IR Logo
P50B60PD1
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
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