DataSheet26.com

AUIRGP50B60PD1 PDF даташит

Спецификация AUIRGP50B60PD1 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «WARP2 SERIES IGBT».

Детали детали

Номер произв AUIRGP50B60PD1
Описание WARP2 SERIES IGBT
Производители International Rectifier
логотип International Rectifier логотип 

14 Pages
scroll

No Preview Available !

AUIRGP50B60PD1 Даташит, Описание, Даташиты
AUTOMOTIVE GRADE
PD - 96306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
Automotive HEV and EV
PFC and ZVS SMPS Circuits
Features
Low VCE(ON) NPT Technology, Positive Temperature
Coefficient
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61m
ID (FET equivalent) = 50A
E
C
G
TO-247AC
AUIRGP50B60PD1
G
C
E
C
G
TO-247AD
AUIRGP50B60PD1E
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
600
75 h
45
150
150
40
15
60
±20
390
156
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
––– ––– 0.32
––– ––– 1.7
––– 0.24 –––
––– –––
40
––– 6.0 (0.21) –––
°C/W
g (oz)
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/02/10









No Preview Available !

AUIRGP50B60PD1 Даташит, Описание, Даташиты
AUIRGP50B60PD1/AUIRGP50B60PD1E
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 0.31 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance
— 1.7 — 1MHz, Open Collector
— 2.00 2.35
IC = 33A, VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.45 2.85 V IC = 50A, VGE = 15V
— 2.60 2.95
IC = 33A, VGE = 15V, TJ = 125°C
— 3.20 3.60
IC = 50A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 4.0 5.0 V IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance
— 41 — S VCE = 50V, IC = 33A, PW = 80µs
ICES Collector-to-Emitter Leakage Current
— 5.0 500 µA VGE = 0V, VCE = 600V
— 1.0 — mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop
— 1.30 1.70 V IF = 15A, VGE = 0V
— 1.20 1.60
IF = 15A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig
4, 5,6,8,9
7,8,9
10
Static or Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 205 308
IC = 33A
Qgc Gate-to-Collector Charge (turn-on)
— 70 105 nC VCC = 400V
Qge Gate-to-Emitter Charge (turn-on)
— 30 45
VGE = 15V
Eon Turn-On Switching Loss
— 255 305
IC = 33A, VCC = 390V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
fÃ× 375 445 µJ VGE = +15V, RG = 3.3, L = 200µH
— 630 750
TJ = 25°C
td(on)
Turn-On delay time
— 30 40
IC = 33A, VCC = 390V
tr
td(off)
Rise time
Turn-Off delay time
— 10 15 ns VGE = +15V, RG = 3.3, L = 200µH
— 130 150
TJ = 25°C fÃÃ
tf Fall time
— 11 15
Eon Turn-On Switching Loss
— 580 700
IC = 33A, VCC = 390V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 480 550 µJ VGE = +15V, RG = 3.3, L = 200µH
— 1060 1250
fTJ = 125°C
td(on)
Turn-On delay time
— 26 35
IC = 33A, VCC = 390V
tr
td(off)
Rise time
Turn-Off delay time
— 13 20 ns VGE = +15V, RG = 3.3, L = 200µH
— 146 165
TJ = 125°CÃfÃÃ
tf Fall time
— 15 20
Cies Input Capacitance
— 3648 —
VGE = 0V
Coes Output Capacitance
— 322 —
VCC = 30V
Cres
Coes eff.
Coes eff. (ER)
Reverse Transfer Capacitance
gEffective Output Capacitance (Time Related)
gEffective Output Capacitance (Energy Related)
— 56 — pF f = 1Mhz
— 215 —
VGE = 0V, VCE = 0V to 480V
— 163 —
TJ = 150°C, IC = 150A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time
— 42 60 ns TJ = 25°C IF = 15A, VR = 200V,
— 74 120
TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge
— 80 180 nC TJ = 25°C IF = 15A, VR = 200V,
— 220 600
TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current
— 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V,
Notes:
— 6.5 10
TJ = 125°C di/dt = 200A/µs
Ref.Fig
17
CT1
CT3
CT3
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
16
15
3
CT2
19
21
19,20,21,22
CT5
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the
same energy as Coes while VCE is rising from 0 to 80% VCES.
† Calculated continuous current based on maximum allowable junction temperature. Package current limit is 60A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
2
www.irf.com









No Preview Available !

AUIRGP50B60PD1 Даташит, Описание, Даташиты
AUIRGP50B60PD1/AUIRGP50B60PD1E
Qualification Information
Automotive
(per AEC-Q101) ††
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
TO-247AC
TO-247AD
ESD
Human Body Model
Charged Device Model
RoHS Compliant
N/A
Class M4 (+/-450V)
AEC-Q101-002
Class H2 (+/-4500V)
AEC-Q101-001
Class C5 (+/-1100V)
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3










Скачать PDF:

[ AUIRGP50B60PD1.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
AUIRGP50B60PD1WARP2 SERIES IGBTInternational Rectifier
International Rectifier
AUIRGP50B60PD1EWARP2 SERIES IGBTInternational Rectifier
International Rectifier

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск