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VS-16TTS12STRL-M3 PDF даташит

Спецификация VS-16TTS12STRL-M3 изготовлена ​​​​«Vishay» и имеет функцию, называемую «Thyristor High Voltage / Surface Mount Phase Control SCR».

Детали детали

Номер произв VS-16TTS12STRL-M3
Описание Thyristor High Voltage / Surface Mount Phase Control SCR
Производители Vishay
логотип Vishay логотип 

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VS-16TTS12STRL-M3 Даташит, Описание, Даташиты
www.vishay.com
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A
2
Anode
2
3
1
TO-263AB (D2PAK)
13
Cathode Gate
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
TO-263AB (D2PAK)
Single SCR
10 A
800 V, 1200 V
1.4 V
60 mA
- 40 °C to 125 °C
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and
JEDEC®-JESD47
qualified
according
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-16TTS..S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
2.5
Aluminum IMS, RthCA = 15 °C/W
6.3
Aluminum IMS with heatsink, RthCA = 5 °C/W
14.0
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
THREE-PHASE BRIDGE
3.5
9.5
18.5
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
IRMS
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
10 A, TJ = 25 °C
dI/dt
TJ
VALUES
10
16
800/1200
200
1.4
500
150
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-16TTS08S-M3
VS-16TTS12S-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
IRRM/IDRM
AT 125 °C
mA
10
Revision: 27-Jan-14
1 Document Number: 94893
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

VS-16TTS12STRL-M3 Даташит, Описание, Даташиты
www.vishay.com
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IT(AV)
IRMS
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
I2t
VTM
rt
VT(TO)
Maximum reverse and direct leakage current IRM/IDM
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
IH
IL
dV/dt
dI/dt
TC = 98 °C, 180° conduction, half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
10 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
Anode supply = 6 V, resistive load,TJ = 25 °C
TJ = TJ max. linear to 80 % VDRM = Rg - k = Open
VALUES
UNITS
TYP. MAX.
10
16
A
170
200
144
A2s
200
2000
A2s
1.4 V
24.0 m
1.1 V
0.5
10
- 150
mA
200
500 V/μs
150 A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
Maximum required DC gate current to trigger
IGT
Maximum required DC gate voltage to trigger
VGT
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
VGD
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
0.25
2.0
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
UNITS
μs
Revision: 27-Jan-14
2 Document Number: 94893
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

VS-16TTS12STRL-M3 Даташит, Описание, Даташиты
www.vishay.com
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Soldering temperature
Maximum thermal resistance,
junction to case
TS
RthJC
For 10 s (1.6 mm from case)
DC operation
Typical thermal resistance,
junction to ambient
RthJA
PCB mount (1)
Approximate weight
Marking device
Case style D2PAK (SMD-220)
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
VALUES
UNITS
- 40 to 125
260
°C
1.3
°C/W
40
2g
0.07 oz.
16TTS08S
16TTS12S
125
16TTS.. Series
120 R thJC (DC) = 1.3 °C/W
115
Conduction Angle
110
105
100
95
90
0
30°
60°
90°
120°
180°
2 4 6 8 10 12
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
18
180°
16 120°
90°
14 60°
12 30°
10 RMS Limit
8
Conduction Angle
6
4 16TTS.. Series
TJ = 125°C
2
0
0 1 2 3 4 5 6 7 8 9 10 11
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
125
16TTS.. Series
120 R thJC (DC) = 1.3 °C/W
115
Conduction Period
110
105
100
95
90
0
30° 60°
90°
120°
180° DC
2 4 6 8 10 12 14 16
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
25
DC
180°
20 120°
90°
60°
30°
15
RMS Limit
10
5
Conduction Period
16TTS.. Series
TJ = 125°C
0
0 2 4 6 8 10 12 14 16 18
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 27-Jan-14
3 Document Number: 94893
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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