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Si3443CDV Datasheet Download - Vishay

Номер произв Si3443CDV
Описание P-Channel 20 V (D-S) MOSFET
Производители Vishay
логотип Vishay логотип 

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Si3443CDV Даташит, Описание, Даташиты
P-Channel 20 V (D-S) MOSFET
Si3443CDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.060 at VGS = - 4.5 V
- 20 0.084 at VGS = - 2.7 V
0.100 at VGS = - 2.5 V
ID (A)a
- 4.7
- 3.9
- 3.4
Qg (Typ.)
7.53 nC
TSOP-6
Top View
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• HDD
• Asynchronous Rectification
Load Switch for Portable Devices
(4) S
16
3 mm
25
34
2.85 mm
Marking Code
AL XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free)
Si3443CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 20
± 12
- 5.97
- 4.6
- 4.7b, c
- 3.4b, c
- 20
- 2.67
- 1.71b, c
3.2
2.05
2b, c
1.28b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
51
32
Maximum
62.5
39
Unit
°C/W
Document Number: 74495
www.vishay.com
S12-0335-Rev. C, 13-Feb-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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Si3443CDV Даташит, Описание, Даташиты
Si3443CDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS/TJ
VGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS - 4.5 V, ID = - 4.7 A
Drain-Source On-State Resistancea
RDS(on)
VGS - 2.7 V, ID = - 3.9 A
VGS - 2.5 V, ID = - 3.4 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 4.7 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 10 V, VGS = - 5 V, ID = - 4.7 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A
f = 1 MHz
VDD = - 10 V, RL = 2.12
ID - 4.7 A, VGEN = - 4.5 V, Rg = 1
TC = 25 °C
IS = - 1.7 A
IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Min. Typ. Max. Unit
- 20
- 0.6
- 20
- 18.8
3.25
0.0500
0.0692
0.0830
15
- 1.5
± 100
-1
- 10
0.0600
0.0840
0.1000
V
mV/°C
V
nA
µA
A
S
610
132 pF
105
8.26 12.4
7.53 11.3
1.53
nC
2.37
1.7 8.5 12.75
27 41
59 88.5
30 45
ns
11 16.5
- 0.8
20
9
15
5.1
- 2.67
- 20
- 1.2
30
13.5
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 74495
2 S12-0335-Rev. C, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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Si3443CDV Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
VGS = 5 V thru 3.5 V
VGS = 3.0 V
16
4.0
3.2
Si3443CDV
Vishay Siliconix
12
8
4
0
0
0.20
VGS = 2.5 V
VGS = 2.0 V
VGS = 1.5 V
123
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
2.4
1.6
0.8
0.0
0.0
1200
TC = 125 °C
TC = 25 °C
TC = - 55 °C
0.6 1.2 1.8 2.4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
0.15
VGS = 2.5 V
0.10
0.05
VGS = 4.5 V
0.00
0
4 8 12 16
ID - Drain Current (A)
20
On-Resistance vs. Drain Current and Gate Voltage
5
ID = 4.7 A
4
3
VDS = 10 V
VDS = 16 V
2
1
0
0 2 4 6 8 10
Qg - Total Gate Charge (nC)
Gate Charge
900
Ciss
600
300 Coss
Crss
0
0 4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
1.4
VGS = 4.5 V
ID = 4.7 A
1.2 VGS = 2.5 V
ID = 3.4 A
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74495
www.vishay.com
S12-0335-Rev. C, 13-Feb-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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