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PDF 2SC3875 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3875 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Elite | |
| Logotipo |  |
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2SC3875
NPN Epitaxial Silicon Transistor
GENERAL PURPOSE TRANSISTOR
SOT-23
Collector-Emitter Voltage: VCEO = 50V
Collector Dissipation: PC = 150mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
60
50
5
150
150
150
-55~+150
V
V
V
mA
mW
oC
oC
Tolerance : 0.1mm
Dimensions (Unit : mm)
1. Emitter 2. Base 3. Collector
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
IC= 100µA, IE= 0
IC= 1mA, IB= 0
IE= 100µA, IC= 0
VCB= 60V, IE= 0
VCE= 45V, IB= 0
VEB= 5V, IC= 0
VCE= 6V, IC= 2mA
IC= 100mA, IB= 10mA
IC= 100mA, IB= 10mA
VCE= 10V, IC= 1mA
f= 100MHz
Min Max Unit
60 V
50 V
5V
0.1 µA
0.2 µA
0.1 µA
70 700
0.25 V
1V
80 MHz
hFE CLASSIFICATION
Classification
G
hFE 70-140
Y
120-240
GR
200-400
BL
350-700
Device Marking
2SC3875-G=ALO ; 2SC3875-Y=ALY ; 2SC3875-GR=ALG ; 2SC3875-G=ALL
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
Part No. : 2SC3875
Page: 1 / 1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC3875.PDF ] | |
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