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MGA-231T6 PDF даташит

Спецификация MGA-231T6 изготовлена ​​​​«Avago Technologies» и имеет функцию, называемую «High-Gain GPS LNA».

Детали детали

Номер произв MGA-231T6
Описание High-Gain GPS LNA
Производители Avago Technologies
логотип Avago Technologies логотип 

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MGA-231T6 Даташит, Описание, Даташиты
MGA-231T6
High-Gain GPS LNA
with Variable Current and Shutdown Function
Data Sheet
Description
Avago Technologies’ MGA-231T6 is a low-noise amplifier
(LNA) designed for GPS/ISM/Wimax applications in the
(0.9-3.5)GHz frequency range. The LNA uses Avago Tech-
nologies’ proprietary GaAs Enhancement-mode pHEMT
process to achieve high gain with very low noise figure
and high linearity. Noise figure distribution is very tightly
controlled. A CMOS-compatible shutdown pin is included
either for turning the LNA on/off or for current adjust-
ment.
The low noise figure and high gain, coupled with low cur-
rent consumption make it suitable for use in critical low-
power GPS applications or during low-battery situations.
Component Image
Surface Mount 2.0x1.3x0.4 mm3 6-lead UTSLP
PIN 1: Vsd
PIN 2: RFin
31YM
PIN 6: Vdd
PIN 5: RFout
Features
Very Low Noise Figure
High Gain and Linearity
Low External Component Count
Low Shutdown Current
CMOS compatible shutdown pin (SD) current @ Vsd=
1.8V : 0.11mA
Useable down to 1.8V supply
Adjustable current via single external resistor/voltage
Small package dimension: 2.0(L)x1.3(W)x0.4(H) mm
Specifications (Typical performance @ 25°C)
At 1.575GHz
Vdd = 2.85V, Vsd = 1.8V, Idd =4mA
– Gain = 17.1 dB
– NF = 1.06 dB
– Input IP3 = 0.2 dBm
– Input P1dB = -7.7 dBm
PIN 3: NC
Top View
PIN 4:NC [1]
Application
LNA for GPS, WLAN and WIMAX
PIN 6: Vdd
PIN 1: Vsd
PIN 5: RFout GND PIN 2: RFin
PIN 4:NC [1]
PIN 3: NC
Bottom View
Note:
1. Pin 4 must be left unconnected
2. Package marking provides orientation and identification
“31” = Product Code
“Y” = Year of manufacture
“M” = Month code of manufacture









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MGA-231T6 Даташит, Описание, Даташиты
Absolute Maximum Rating[1] TA = 25°C
Symbol
Vdd
Idd
Parameter
Device Drain to Source Voltage[2]
Drain Current[2]
Units Absolute Max. Thermal Resistance [3]
V 3.6
mA 15
(Vdd = 2.85V, Vsd = 1.8V,
Idd = 4mA), jc = 150.8°C/W
Pin,max
Pdiss
Tc[5]
CW RF Input Power (Vdd = 2.7V, Idd = 6mA)
Total Power Dissipation[4]
Recommended Operating Temperature[6]
dBm 13
mW 54
°C -40 to +85
Tj Junction Temperature
°C 150
TSTG Storage Temperature
°C -65 to 150
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Thermal resistance measured using Infra-Red measurement technique.
4. Board (module belly) temperature TB is 25°C. Derate 6.63 mW/°C for Tb > 141.86°C
5. Tc is defined as case temperature, the temperature of the underside of the device where it makes contact with the circuit board
6. The device will function over the recommended range without degradation in reliability or permanent change in performance, but is not
guaranteed to meet the electrical specification.
2









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MGA-231T6 Даташит, Описание, Даташиты
Electrical Specifications
TA = 25°C, DC bias for RF parameters is as specified below. Freq=1.575GHz – Typical Performance[1]
Table 1a. Performance table under nominal operating conditions (Vdd =2.85V, Vsd = 1.8V, Idd = 4mA, R2 = 8.2 kOhm)
Symbol
G
NF[1]
IP1dB
IIP3[3]
S11
S22
S12
Idd
Ish
Parameter and Test Condition
Units Min.
Typ
Max.
Gain dB 15.2 17.1 18.7
Noise Figure[1]
dB –
1.06 1.41
Input 1dB Compressed Power
dBm –
-7.7 –
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
dBm –
0.2 –
Input Return Loss
dB –
-10 –
Output Return Loss
dB –
-10 –
Reverse Isolation
dB –
-29 –
Supply DC current at Shutdown (SD) voltage Vsd=2.7V
mA –
4
6.6
Shutdown Current @ VSD = 0V
uA –
0.4 –
Table 1b. Performance table under nominal operating conditions (Vdd =1.8V, Vsd = 2.6V, Idd = 3.5mA, R2 = 8.2 kOhm)
Symbol
G
NF[1]
IP1dB
IIP3[3]
S11
S22
S12
Idd
Ish
Parameter and Test Condition
Units Min.
Typ
Max.
Gain
dB –
16.6 –
Noise Figure
dB –
1.1 –
Input 1dB Compressed Power
dBm –
-7.5 –
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
dBm –
0
Input Return Loss
dB –
-10 –
Output Return Loss
dB –
-10 –
Reverse Isolation
dB –
-28 –
Supply DC current at Shutdown (SD) voltage Vsd=2.7V
mA –
3.5 –
Shutdown Current @ VSD = 0V
uA –
0.2 –
Table 1c. Performance table under nominal operating conditions (Vdd = Vsd = 2.7V, Idd = 6mA, R2 = 5.6 kOhm)
Symbol
Parameter and Test Condition
Units Min.
Typ
Max.
G Gain
dB 17.9 –
NF[1]
Noise Figure
dB –
1.0
IP1dB
Input 1dB Compressed Power
dBm –
-5.9 –
IIP3[3]
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
dBm –
+2.7 –
S11 Input Return Loss
dB –
-11 –
S22 Output Return Loss
dB –
-11 –
S12 Reverse Isolation
dB –
-29 –
Idd
Supply DC current at Shutdown (SD) voltage Vsd=2.7V
mA –
6
Ish Shutdown Current @ VSD = 0V
uA –
0.3 –
Notes:
1. NF is measured at DUT input leads with board loss deembedded.
2. Measurements at 1.575GHz obtained using demo board described in Figures 4.
3. 1.575GHz IIP3 test condition: FRF1 = 1572.5 MHz, FRF2 = 1577.5 MHz with input power of -20dBm per tone measured at the worst case side band.
3










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Номер в каталогеОписаниеПроизводители
MGA-231T6High-Gain GPS LNAAvago Technologies
Avago Technologies

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