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ALM-2506 PDF даташит

Спецификация ALM-2506 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «GPS Low Noise Amplifi er Variable Current/Shutdown Function».

Детали детали

Номер произв ALM-2506
Описание GPS Low Noise Amplifi er Variable Current/Shutdown Function
Производители AVAGO
логотип AVAGO логотип 

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ALM-2506 Даташит, Описание, Даташиты
ALM-2506
GPS Low Noise Amplifier Variable Current/Shutdown Function
Data Sheet
Description
Avago Technologies’s ALM-2506 is a LNA designed
for GPS/ISM/Wimax applications in the (0.9-2.4)GHz
frequency range. The LNA uses Avago Technologies’s
proprietary GaAs Enhancement-mode pHEMT process to
achieve high gain operation with very low noise figures
and high linearity. Noise figure distribution is very tightly
controlled. Gain and supply current are guaranteed pa-
rameters. A CMOS compatible shutdown pin is included
to turn the LNA off and provide a variable bias.
The ALM-2506 LNA is useable down to 1V operation.
It achieves low noise figures and high gain even at 1V,
making it suitable for use in critical low power GPS/ISM
band applications.
Package Marking and Orientation
O
BY
WW
Note: Package marking
provides Orientation
and identification:
“B” = Product Code
“Y” = Year
“WW” = Work Week
Top View
Pin Configuration
Pin 6
Pin 5 GND
Pin 4
Bottom View
Pin 1
Pin 2
Pin 3
LNA I/O’s :
1. NC
2. RF_IN
3. NC
4. VSD
5. RF_OUT
6. VDD
Features
 Surface Mount 2.0 x 2.0 x 1.1 mm3 MCOB
 Advanced GaAs E-pHEMT
 Low Noise: 0.8 dB typ
 High Gain: 14.3 dB typ
 Low component count
 High IIP3 and IP1dB
 Wide Supply Voltage: 1V to 3.6V
 Shutdown current: < 0.1uA
 CMOS compatible shutdown pin (VSD) current @ 2.85V:
90uA
 Adjustable bias current via one single external resistor/
voltage
 Small Footprint: 2x2mm2
 Low Profile: 1.1mm typ
 Lead free and Halogen free
 Ext matching for non-GPS freq band operation
Specifications (25 deg):
At 1.575GHz, 2.85V 8mA (Typ)
 Gain = 14.3 dB (Typ)
 NF = 0.8 dB (Typ)
 IIP3 = 4.7 dBm (Typ)
 IP1dB = 1.8 dBm (Typ)
 S11 = -11.8 dB (Typ)
 S22 = -12.4 dB (Typ)
Note: Measurements obtained using demoboard described in Figure 4.
Simplified Schmatic
VSD
VDD
BIAS
RF_IN
C
C1 Amplifier2
AMP1
RF_OUT
C
C2









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ALM-2506 Даташит, Описание, Даташиты
Absolute Maximum Ratings [1]
Symbol
Parameter
Units
VDS
IDS
Pdiss
Drain – Source Voltage [2]
2G Drain Current [2]
Total Power Dissipation [3]
V
mA
mW
Pin max.
RF Input Power
dBm
TCH Channel Temperature
°C
TSTG
ch_b
Storage Temperature
Thermal Resistance [4]
°C
°C/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C. Derate 4.32mW/°C for TB > 137°C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
Absolute Maximum
3.6
15
54
+10
150
-65 to 150
232
Electrical Specifications
TA = 25°C, DC bias for RF parameter is VDD = VSD = +2.85V @ 8mA (unless otherwise specified)
Table 1. Performance table at nominal operating conditions
VDD= VSD = +2.85V, R1 = 18K Ohm, Freq=1.575GHz – Typical Performance
Symbol
G
NF
Parameter and Test Condition
Gain
Noise Figure
Units Min.
dB
dB
Typ
14.3
0.8
IP1dB
IIP3
S11
Input 1dB Compressed Power
Input 3rd Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
Input Return Loss
dBm
dBm
dB
1.8
4.7
-11.8
S22 Output Return Loss
dB - 12.4
Ids Supply Current
mA 8
Ish Shutdown Current @ VSD = 0V
uA
0.1
Vds Supply Voltage
V 2.85
IP1dB1710M
IIP3OUT
Out of Band IP1dB (DCS 1710MHz) blocking
Out of Band IIP3 (DCS 1775MHz & 1950MHz)
dBm
dBm
2.9
5.5
Max.
Table 2. Typical performance at low operation voltages with R1 (see Fig 5) set to 0 Ohm
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz – Typical Performance
(VSD=VDD, R1=0 Ohm)
Symbol
G
Parameter and Test Condition
Gain
Units VDD = 2V
dB 15
NF Noise Figure
dB 0.8
IP1dB
IIP3
S11
Input 1dB Compressed Power
Input 3rd Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
Input Return Loss
dBm -1.4
dBm 7.3
dB -13.8
S22 Output Return Loss
dB -15.5
Ids Supply Current
mA 13
Ish Shutdown Current @ VSD = 0V
Vds Supply Voltage
uA 0.1
V2
IP1dB1710M
IIP3OUT
Out of Band IP1dB (DCS 1710MHz) blocking
Out of Band IIP3 (DCS 1775MHz & 1950MHz)
dBm
dBm
-0.3
8.7
VDD = 1.5V
14.2
0.9
-2.4
4.9
VDD = 1.0V
12.3
1
-3.8
5.2
-11.5
-14.5
7.5
0.1
1.5
-1.9
5.8
-8
-11.7
3.6
0.1
1.0
-2.9
3
2









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ALM-2506 Даташит, Описание, Даташиты
H 0.010
W 0.0220
e 3.48
RF IN
0.1μF
12Ω / / 33nH
5.6nH
6.8pF
4.7nH
100pF
10nH 18k
6.8pF
RF OUT
GPS LNA
MAR 2005 TL.
Avago
Technologies
Figure 1. Demoboard and Application Circuit Components
C
C3
C=0.1 uF
C
C4
C=6.8 pF
VSD R
R1
R=18 kOhm
C
C5
C=6.8 pF
BIAS
RF_IN
L
L1
L=5.6 nH
Johanson 0402
C
C1
L
L2
L=10 nH
Johanson 0402
Amplifier2
AMP1
+VDD
PRL
PRL1
R=12 Ohm
L=33 nH
Johanson 0402
L
L3
L=4.7 nH
R=
Toko LL1005
C
C2
RF_OUT
Notes
 L1 and L2 form the input matching network.
The LNA module has a integrated coupling
and DC-blocking capacitors at the input and
output. Best noise performance is obtained
using high-Q wirewound inductors. This
circuit demonstrates that low noise figures are
obtainable with standard 0402 chip inductors.
Replacing L1, L2 and L3 with high-Q wirewound
inductors (eg. Cilcraft 0402CS series) will yield
0.1dB lower NF and 0.6dB higher Gain.
 L3 is an output matching inductor.
 C5 is a RF bypass capacitor.
 PRL1 is a network that isolates the measurement
demoboard from external disturbances. C3 and
C4 mitigates the effect of external noise pickup
on the VSD and VDD lines. These components
are not required in actual operation.
 Bias control is achieved by either varying
the VSD voltage without R1 or fixing the VSD
voltage to VDD and varying R1. Typical value
for R1 is 18k Ohm for 8mA total current at
VDD=+2.85V.
 Higher gain and IP3 performance can be
obtained by increasing the supply current. This
can be achieved by reducing the value for R1 to
obtain desired current.
 For low voltage operation such as 1.5V or 1.0V,
the R1 may be omitted and VSD connected
directly to the supply pins.
Figure 2. Demoboard schematic
3










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