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PDF ATF-551M4 Data sheet ( Hoja de datos )
| Número de pieza | ATF-551M4 | |
| Descripción | Low Noise Enhancement Mode Pseudomorphic HEMT | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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ATF-551M4
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ATF-551M4 is a high dynamic
range, super low noise, single supply E‑pHEMT GaAs FET
housed in a thin miniature leadless package.
The combination of small device size, super low noise
(under 1 dB Fmin from 2 to 6 GHz), high linearity and
low power makes the ATF-551M4 ideal for LNA or hybrid
module designs in wireless receiver in the 450 MHz to
10 GHz frequency band.
Applications include Cellular/PCS/ WCDMA handsets
and data modem cards, fixed wireless infrastructure
in the 2.4, 3.5 GHz and UNII frequency bands, as well
as 2.4 GHz 802.11b, 5 GHz 802.11a and HIPERLAN/2
Wireless LAN PC-cards.
Note:
1. Avago’s enhancement mode E-pHEMT devices are the first com-
mercially available single-supply GaAs transistors that do not need
a negative gate bias voltage for operation. They can help simplify
the design and reduce the cost of receivers and transmitters in many
applications in the 450 MHz to 10 GHz frequency range.
MiniPak 1.4 mm x 1.2 mm Package
Vx
Pin Connections and Package Marking
Features
• Very low noise figure and high linearity
• Single Supply Enhancement Mode Technology[1]
optimized for 3V operation
• Excellent uniformity in product specifications
• 400 micron gate width
• Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option available
Specifications
• 2 GHz; 2.7V, 10 mA (typ.)
• 24.1 dBm output 3rd order intercept
• 14.6 dBm output power at 1 dB gain compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier for:
– Cellular/PCS/WCDMA handsets and modem cards
– 2.4 GHz, 3.5 GHz and UNII fixed wireless infrastructure
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN Wireless LAN
• General purpose discrete E-pHEMT for other ultra low
noise applications
Source
Drain
VxPin3 Pin4
Gate Source
Pin 2 Pin 1
Note:
Top View. Package marking provides orientation, product identifica-
tion and date code.
“V” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.
1 page  
ATF-551M4 Typical Performance Curves, continued
20 0.6
19
18
17
16 2V
2.7V
3V
15
0 5 10 15 20 25 30 35
Ids (mA)
Figure 11. Gain vs. Ids and Vds at 2 GHz[1].
0.5
0.4
0.3
0.2
2V
0.1 2.7V
3V
0
0 5 10 15 20 25 30 35
Ids (mA)
Figure 12. Fmin vs. Ids and Vds at 2 GHz[2].
36
32
28
24
20 2V
2.7V
3V
16
0 5 10 15 20 25 30 35
Ids (mA)
Figure 13. OIP3 vs. Ids and Vds at 2 GHz[1].
18
16
14
12
10
8
6
4 2V
2.7V
2 3V
0
0 5 10 15 20 25 30 35
Ids (mA)
Figure 14. IIP3 vs. Ids and Vds at 2 GHz[1].
17
16
15
14
13
12
2V
11 2.7V
3V
10
0 5 10 15 20 25 30 35
Ids (mA)
Figure 15. P1dB vs. Ids and Vds at 2 GHz[1].
Notes:
1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match
with reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match
based on production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at
the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from
actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
5 Page 
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS= 10 mA
Freq.
GHz Mag.
S11 Ang. dB
MS2a1 g. Ang.
0.1 0.995 -5.9
0.5 0.955 -28.7
0.9 0.907 -50.0
1.0 0.896 -55.0
1.5 0.833 -78.6
1.9 0.789 -95.5
2.0 0.779 -99.4
2.5 0.737 -117.4
3.0 0.707 -133.4
4.0 0.679 -159.1
5.0 0.674 -178.9
6.0 0.675 167.3
7.0 0.676 154.9
8.0 0.679 144.5
9.0 0.686 133.5
10.0 0.684 120.8
11.0 0.688 107.5
12.0 0.693 93.7
13.0 0.710 82.7
14.0 0.743 68.6
15.0 0.760 56.5
16.0 0.805 46.2
17.0 0.830 38.1
18.0 0.872 31.5
20.55
20.11
19.52
19.36
18.34
17.43
17.21
16.07
14.98
13.01
11.30
9.93
8.72
7.73
6.84
6.03
5.30
4.59
3.86
3.19
2.37
1.42
0.43
-0.58
10.656
10.129
9.466
9.292
8.265
7.439
7.255
6.361
5.610
4.471
3.673
3.136
2.728
2.435
2.198
2.002
1.841
1.696
1.559
1.443
1.314
1.177
1.051
0.935
175.9
158.4
144.6
141.4
126.1
115.4
113.0
101.7
91.8
75.0
60.8
49.1
37.7
27.0
16.2
5.1
-5.9
-17.2
-28.2
-39.8
-51.5
-62.2
-72.8
-83.1
Mag. S12 Ang.
0.006
0.028
0.046
0.050
0.067
0.076
0.078
0.085
0.089
0.093
0.094
0.095
0.096
0.099
0.102
0.107
0.113
0.121
0.129
0.139
0.147
0.153
0.158
0.163
86.3
72.0
61.3
58.8
47.6
40.0
38.4
31.0
25.1
16.6
10.9
8.1
5.9
4.3
2.9
0.7
-1.7
-5.2
-8.9
-14.3
-20.2
-26.2
-32.5
-39.1
Mag. S22 Ang.
0.825
0.782
0.735
0.717
0.639
0.577
0.562
0.495
0.439
0.357
0.303
0.264
0.244
0.230
0.222
0.222
0.230
0.239
0.232
0.222
0.232
0.251
0.293
0.353
-3.0
-14.0
-24.5
-27.0
-37.6
-44.6
-46.2
-53.1
-58.8
-68.3
-77.6
-83.7
-93.5
-104.1
-116.6
-129.0
-140.8
-151.9
-164.6
176.6
155.6
134.3
112.0
92.7
MSG/MAG
dB
32.49
25.58
23.13
22.69
20.91
19.91
19.69
18.74
18.00
16.82
15.92
15.19
14.54
12.94
11.58
10.44
9.69
9.02
8.47
8.42
7.69
8.26
8.07
7.59
Typical Noise Parameters, VDS = 2.7V, IDS= 10 mA
Freq
Fmin
GHz dB
Γopt
Mag.
Γopt
Rn/50
Ang.
0.5
0.26 0.64 -4.4
0.14
0.9 0.27 0.57 7.5 0.13
1.0 0.30 0.54 11.1 0.13
1.9 0.46 0.49 36.6 0.11
2.0 0.41 0.48 40.4 0.12
2.4 0.47 0.44 50.3 0.11
3.0 0.55 0.36 69.5 0.10
3.9
0.61
0.32
101.3
0.08
5.0
0.74
0.32
139.5
0.06
5.8
0.88
0.35
161.5
0.05
6.0
0.90
0.35
163.9
0.05
7.0
1.00
0.37
-173.6
0.06
8.0
1.12
0.41
-158.2
0.07
9.0
1.25
0.46
-143.0
0.09
10.0
1.46
0.46
-127.2
0.15
Ga
dB
23.79
21.80
21.60
18.06
17.92
16.79
15.70
14.24
12.86
12.01
11.82
10.93
10.24
9.66
8.85
40
30
MSG
20
10
0 |S21|2
MAG
MSG
-10
0
5 10 15
FREQUENCY (GHz)
Figure 29. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 10 mA.
20
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad.
11
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet ATF-551M4.PDF ] | |
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