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PDF HPND-4005 Data sheet ( Hoja de datos )
| Número de pieza | HPND-4005 | |
| Descripción | Beam Lead PIN Diode | |
| Fabricantes | HP | |
| Logotipo |  |
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Beam Lead PIN Diode
Technical Data
HPND-4005
Features
• High Breakdown Voltage
120 V Typical
• Low Capacitance
0.017 pF Typical
• Low Resistance
4.7 Ω Typical
• Rugged Construction
4 Grams Minimum Lead Pull
• Nitride Passivated
Description
The HPND-4005 planar beam lead
PIN diode is constructed to offer
exceptional lead strength while
achieving excellent electrical
performance at high frequencies.
High beam strength offers users
superior assembly yield, while
extremely low capacitance allows
high isolation to be realized.
Nitride passivation and polyimide
coating provide reliable device
protection.
Applications
The HPND-4005 beam lead PIN
diode is designed for use in
stripline or microstrip circuits.
Applications include switching,
attenuating, phase shifting,
limiting, and modulating at
microwave frequencies. The
CATHODE
110 (4.3)
80 (3.1)
GOLD LEADS
S1O2/Si3N4
PASSIVATION
130 (5.1)
110 (4.3)
130 (5.1)
110 (4.3)
.4 (10)
.3 (7)
760 (29.9)
640 (25.2)
220 (8.7)
180 (7.1)
GLASS
SILICON
320 (12.6)
220 (8.7)
280 (11.0)
180 (7.1)
DIMENSIONS IN µm (1/1000 inch)
Outline 21
60 (2.4)
30 (1.2)
25 MIN (1.0)
Maximum Ratings
Operating Temperature ................................................ -65°C to +175°C
Storage Temperature .................................................... -65°C to +200°C
Power Dissipation at TCASE = 25°C ........................................... 250 mW
(Derate linearly to zero at 175°C.)
Minimum Lead Strength ............................... 4 grams pull on either lead
Diode Mounting Temperature ............................. 220°C for 10 sec. max.
extremely low capacitance of the
HPND-4005 makes it ideal for
circuits requiring high isolation in
a series diode configuration.
2-83
5965-8877E
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HPND-4005.PDF ] | |
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