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HSCH-5331 PDF даташит

Спецификация HSCH-5331 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «Beam Lead Schottky Diodes».

Детали детали

Номер произв HSCH-5331
Описание Beam Lead Schottky Diodes
Производители AVAGO
логотип AVAGO логотип 

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HSCH-5331 Даташит, Описание, Даташиты
HSCH-53xx Series
Beam Lead Schottky Diodes for Mixers and Detectors
(1-26 GHz)
Data Sheet
Description
These beam lead diodes are constructed using a metal-
semiconductor Schottky barrier junction. Advanced
epitaxial techniques and precise process control insure
uniformity and repeatability of this planar passivated
microwave semiconductor. A nitride passivation layer
provides immunity from contaminants which could
otherwise lead to IR drift.
The Avago beam lead process allows for large beam
anchor pads for rugged construction (typical 6 gram
pull strength) without degrading capacitance.
Applications
The beam lead diode is ideally suited for use in stripline
or microstrip circuits. Its small physical size and
uniform dimensions give it low parasitics and repeatable
RF characteristics through K-band.
Features
• Platinum tri-metal system
High temperature stability
• Silicon nitride passivation
Stable, reliable performance
• Low noise figure
Guaranteed 7.5 dB at 26 GHz
• High uniformity
Tightly controlled process insures uniform RF
characteristics
• Rugged construction
4 grams minimum lead pull
• Low capacitance
0.10 pF max. at 0 V
• Polyimide scratch protection
The basic medium barrier devices in this family are DC
tested HSCH-5310 and -5312. Equivalent low barrier
devices are HSCH-5330 and -5332. Batch matched
versions are available as HSCH-5331.
The HSCH-5340 is selected for applications requiring
guaranteed RF-tested performance up to 26 GHz. The
HSCH-5314 is rated at 7.2 dB maximum noise figure at
16 GHz.
Assembly Techniques
Thermocompression bonding is recommended. Welding
or conductive epoxy may also be used. For additional
information, see Application Note 979, The Handling
and Bonding of Beam Lead Devices Made Easy, or
Application Note 993, Beam Lead Device Bonding to
Soft Substances.
Outline 07
130 (5)
100 (4)
CATHODE
GOLD LEADS
225 (9)
200 (8)
310 (12)
250 (10)
225 (9)
170 (7)
135 (5)
90 (3)
135 (5)
90 (3)
30 MIN (1)
8 Min. (.3)
SILICON
710 (28)
670 (26)
GLASS
60 (2)
40 (1)
DIMENSIONS IN µm (1/1000 inch)









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HSCH-5331 Даташит, Описание, Даташиты
Maximum Ratings
Pulse Power Incident at TA = 25°C ........................................................ 1 W
Pulse Width = 1 ms, Du = 0.001
CW Power Dissipation at TA = 25°C ............................................... 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
TOPR – Operating Temperature Range ............................. -65°C to +175 °C
TSTG – Storage Temperature Range ................................... -65°C to +200°C
Minimum Lead Strength ...................................... 4 grams pull on any lead
Diode Mounting Temperature .............................. +350°C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
Table IA. Electrical Specifications for RF Tested Diodes at TA = 25°C
Part
Number
HSCH-
5314
Barrier
Medium
Max.
Noise
Figure
NF (dB)
7.2 at
16 GHz
IF
Impedance
ZIF ()
Min. Max.
200 400
Max.
SWR
1.5:1
Min.
Break-
down
Voltage
VBR (V)
4
5340 Low 7.5 at 150
26 GHz
350
Test
Conditions
DC Load Resistance - 0
LO Power = 1 mW
IF = 30 MHz, 1.5 dB NF
IR 10 µA
*Minimum batch size 20 units.
Note:
1. CT = CJ + 0.02 pF (fringing cap).
Max.
Dynamic
Resis-
tance
RD ()
16
20
IF = 5 mA
Max.
Total
Capaci-
tance
CT (pF)
0.15
Max.
Forward
Voltage
VF (mV)
500
0.10 375
VR = 0 V IF = 1 mA
f = 1 MHz
Max.
Leakage
Current
IR (nA)
100
400
VR = 1 V
2









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HSCH-5331 Даташит, Описание, Даташиты
Table IB. Electrical Specifications for DC Tested Diodes at TA = 25°C
Part
Number
HSCH-
Batch*
Matched
HSCH-
Barrier
Minimum
Breakdown
Voltage
VBR (V)
Maximum
Dynamic
Resistance
RD ()
5312
Medium
4
16
5310 20
5332 Low
5330 5331
4
16
20
Test
Conditions
VF 15 mV
@ 5 mA
IR 10 µA
IF = 5 mA
*Minimum batch size 20 units.
Maximum
Total
Capacitance
CT (pF)
0.15
0.10
0.15
0.10
VR = 0 V
f = 1 MHz
Maximum
Forward
Voltage
VF (mV)
500
375
IF = 1 mA
Maximum
Leakage
Current
IR (nA)
100
400
VR = 1 V
Typical Detector Characteristics at TA = 25°C
Medium Barrier and Low Barrier (DC Bias)
Parameter
Symbol
Tangential Sensitivity
TSS
Voltage Sensitivity
γ
Video Resistance
RV
Typical Value
–54
6.6
1400
Low Barrier (Zero Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Symbol
TSS
γ
RV
Typical Value
–44
10
1.8
Units
dBm
mV/µW
Test Conditions
20 µA Bias, RL = 100 k
Video Bandwidth = 2 MHz
f = 10 GHz
Units
dBm
mV/µW
M
Test Conditions
Zero Bias, RL = 10 M
Video Bandwidth = 2 MHz
f = 10 GHz
SPICE Parameters
Parameter
BV
CJO
EG
IBV
IS
N
RS
PB
PT
M
Units
V
pF
eV
A
A
V
3
HSCH-5312
HSCH-5314
5
0.13
0.69
10E-5
3 x 10E-10
1.08
9
0.65
2
0.5
HSCH-5310
5
0.09
0.69
10E-5
3 x 10E-10
1.08
13
0.65
2
0.5
HSCH-5330
HSCH-5340
5
0.09
0.69
10E-5
4 x 10E-8
1.08
13
0.5
2
0.5
HSCH-5332
5
0.13
0.69
10E-5
4 x 10E-8
1.08
9
0.5
2
0.5










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Номер в каталогеОписаниеПроизводители
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