HSCH-5332 Datasheet PDF - AVAGO
| Part Number | HSCH-5332 | |
| Description | Beam Lead Schottky Diodes | |
| Manufacturers | AVAGO | |
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HSCH-53xx Series
Beam Lead Schottky Diodes for Mixers and Detectors
(1-26 GHz)
Data Sheet
Description
These beam lead diodes are constructed using a metal-
semiconductor Schottky barrier junction. Advanced
epitaxial techniques and precise process control insure
uniformity and repeatability of this planar passivated
microwave semiconductor. A nitride passivation layer
provides immunity from contaminants which could
otherwise lead to IR drift.
The Avago beam lead process allows for large beam
anchor pads for rugged construction (typical 6 gram
pull strength) without degrading capacitance.
Applications
The beam lead diode is ideally suited for use in stripline
or microstrip circuits. Its small physical size and
uniform dimensions give it low parasitics and repeatable
RF characteristics through K-band.
Features
• Platinum tri-metal system
High temperature stability
• Silicon nitride passivation
Stable, reliable performance
• Low noise figure
Guaranteed 7.5 dB at 26 GHz
• High uniformity
Tightly controlled process insures uniform RF
characteristics
• Rugged construction
4 grams minimum lead pull
• Low capacitance
0.10 pF max. at 0 V
• Polyimide scratch protection
The basic medium barrier devices in this family are DC
tested HSCH-5310 and -5312. Equivalent low barrier
devices are HSCH-5330 and -5332. Batch matched
versions are available as HSCH-5331.
The HSCH-5340 is selected for applications requiring
guaranteed RF-tested performance up to 26 GHz. The
HSCH-5314 is rated at 7.2 dB maximum noise figure at
16 GHz.
Assembly Techniques
Thermocompression bonding is recommended. Welding
or conductive epoxy may also be used. For additional
information, see Application Note 979, The Handling
and Bonding of Beam Lead Devices Made Easy, or
Application Note 993, Beam Lead Device Bonding to
Soft Substances.
Outline 07
130 (5)
100 (4)
CATHODE
GOLD LEADS
225 (9)
200 (8)
310 (12)
250 (10)
225 (9)
170 (7)
135 (5)
90 (3)
135 (5)
90 (3)
30 MIN (1)
8 Min. (.3)
SILICON
710 (28)
670 (26)
GLASS
60 (2)
40 (1)
DIMENSIONS IN µm (1/1000 inch)
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1.0
0.5 1 mA
1.5 mA
3 mA
18 GHz
0.2
10
2
2.0
3.0
5.0
10.0
0.2
0.5
1.0
10.0
5.0
3.0
2.0
Figure 6. Typical admittance characteristics with self bias.
HSCH-5314.
201.µ0A
0.5
50 µA
2.0
150 µA
18 GHz
3.0
10
0.2
5.0
10.0
2
0.2
0.5
1.0
10.0
5.0
3.0
2.0
Figure 7. Typical admittance characteristics with external bias.
HSCH-5314.
Models for Each Beam Lead Schottky Diode
HSCH-5340
1 mA Self Bias
0.03 pF
0.1 nH
0.04 nH
11 Ω
267 Ω
Other HSCH-53xx
Self Bias
0.11 pF
0.02 pF
0.1 nH
Rs
Rj
Cj
Part Numbers
HSCH-5314
1.0 mA Self Bias
RS (Ω) Rj (Ω) Cj (pF)
5.0 393 0.11
1.5 mA Self Bias
RS (Ω) Rj (Ω)
5.2 232
Cj (pF)
0.11
3.0 mA Self Bias
RS (Ω)
5.0
Rj (Ω) Cj (pF)
150 0.12
5
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| Information | Total 6 Pages | |
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