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PDF HSCH-5319 Data sheet ( Hoja de datos )
| Número de pieza | HSCH-5319 | |
| Descripción | Beam Lead Schottky Diodes | |
| Fabricantes | Agilent | |
| Logotipo |  |
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Beam Lead Schottky Diodes for
Mixers and Detectors
(1– 26 GHz)
Technical Data
HSCH-5300 Series
Features
• Platinum Tri-Metal System
High Temperature Stability
• Silicon Nitride Passivation
Stable, Reliable Performance
• Low Noise Figure
Guaranteed 7.5 dB at 26 GHz
• High Uniformity
Tightly Controlled Process
Insures Uniform RF
Characteristics
• Rugged Construction
4 Grams Minimum Lead Pull
• Low Capacitance
0.10 pF Max. at 0 V
• Polyimide Scratch Protection
Outline 07
130 (5)
100 (4)
CATHODE
GOLD LEADS
225 (9)
200 (8)
310 (12)
250 (10)
30 MIN (1)
225 (9)
170 (7)
135 (5)
90 (3)
135 (5)
90 (3)
12 (.5)
8 (.3)
Description
These beam lead diodes are
constructed using a metal-
semiconductor Schottky barrier
junction. Advanced epitaxial
techniques and precise process
control insure uniformity and
repeatability of this planar
passivated microwave semicon-
ductor. A nitride passivation layer
provides immunity from
contaminants which could
otherwise lead to IR drift.
The Agilent beam lead process
allows for large beam anchor pads
for rugged construction (typical
6 gram pull strength) without
degrading capacitance.
SILICON
710 (28)
670 (26)
GLASS
DIMENSIONS IN µm (1/1000 inch)
60 (2)
40 (1)
Maximum Ratings
Pulse Power Incident at TA = 25°C .......................................................... 1 W
Pulse Width = 1 µs, Du = 0.001
CW Power Dissipation at TA = 25°C ................................................ 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
TOPR – Operating Temperature Range ...............................-65°C to +175 °C
TSTG – Storage Temperature Range ....................................-65°C to +200°C
Minimum Lead Strength ........................................ 4 grams pull on any lead
Diode Mounting Temperature ............................... +350°C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
1 page  
5
1 mA
1.5 mA
3 mA
18 GHz
0.2
10
2
0.2
5.0
10.0
20 µA
50 µA
150 µA
18 GHz
0.2 10
2
0.2
5.0
10.0
Figure 6. Typical Admittance Characteristics with Self Bias.
HSCH-5314 and -5315.
Figure 7. Typical Admittance Characteristics with External
Bias. HSCH-5314 and -5315.
0.2
2
12 GHz
1 mA
1.5 mA
3 mA
5.0
10.0
0.2 6
2
20 µA
50 µA
150 µA
12 GHz
5.0
10.0
0.2 0.2
Figure 8. Typical Admittance Characteristics with Self Bias. Figure 9. Typical Admittance Characteristics with External
HSCH-5318 and -5319.
Bias. HSCH-5318 and -5319.
Models for Each Beam Lead Schottky Diode
HSCH-5340, -5341
1 mA Self Bias
0.03 pF
0.1 nH
0.04 nH
11 Ω
267 Ω
0.11 pF
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HSCH-5319.PDF ] | |
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