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C3895 PDF даташит

Спецификация C3895 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «NPN Transistor - 2SC3895».

Детали детали

Номер произв C3895
Описание NPN Transistor - 2SC3895
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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C3895 Даташит, Описание, Даташиты
Ordering number:EN2966B
NPN Triple Diffused Planar Silicon Transistor
2SC3895
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2039D
[2SC3895]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=5A, IB=1.2A
IC=5A, IB=1.2A
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Ratings
1500
800
6
7
16
3.0
60
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
800
max
10
1.0
1.0
5
1.5
Unit
µA
mA
V
mA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/62695TS (KOTO)/N291MH/8049MO, TS No.2966–1/4









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C3895 Даташит, Описание, Даташиты
Parameter
DC Current Gain
Storage Time
Fall Time
2SC3895
Symbol
hFE1
hFE2
tstg
tf
Conditions
VCE=5V, IC=1.0A
VCE=5V, IC=5A
IC=4A, IB1=0.8A, IB2=–1.6A
IC=4A, IB1=0.8A, IB2=–1.6A
Switching Time Test Circuit
Ratings
min typ
8
4
0.1
max
8
3.0
0.2
Unit
µs
µs
No.2966–2/4









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C3895 Даташит, Описание, Даташиты
2SC3895
No.2966–3/4










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