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PDF 2SA1625 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1625 | |
| Descripción | PNP Transistor | |
| Fabricantes | JCST | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA1625 TRANSISTOR (PNP)
FEATURES
z High Voltage
z High Speed Switching
z Low Collector Saturation Voltage
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-400
-400
-7
-500
750
166
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -0.1mA,IE=0
-400
V
V(BR)CEO IC=-1mA,IB=0
-400
V
V(BR)EBO IE=-0.1mA,IC=0
-7
V
ICBO VCB=-400V,IE=0
-10 μA
IEBO VEB=-5V,IC=0
-10 μA
hFE VCE=-5V, IC=-50mA
40
200
VCE(sat)
IC=-100mA,IB=-10mA
-0.5 V
VBE (sat) IC=-100mA,IB=-10mA
-1.2 V
Cob VCB=-10V,IE=0, f=1MHz
20 pF
fT VCE=-10V,IC=-10mA
20
MHz
CLASSIFICATION OF hFE
RANK
RANGE
M
40-80
L
60-120
K
100-200
A,Dec,2010
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SA1625.PDF ] | |
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