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UNR2112 PDF даташит

Спецификация UNR2112 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Transistors».

Детали детали

Номер произв UNR2112
Описание Transistors
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

17 Pages
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UNR2112 Даташит, Описание, Даташиты
Transistors with built-in Resistor
UNR211x Series (UN211x Series)
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
Resistance by Part Number
UNR2110
UNR2111
UNR2112
UNR2113
Marking Symbol (R1)
(UN2110) 6L
47 k
(UN2111) 6A
10 k
(UN2112) 6B
22 k
(UN2113) 6C
47 k
UNR2114 (UN2114) 6D
10 k
UNR2115 (UN2115) 6E
10 k
UNR2116 (UN2116) 6F
4.7 k
UNR2117 (UN2117) 6H
22 k
UNR2118 (UN2118) 6I
0.51 k
UNR2119 (UN2119)
UNR211D (UN211D)
UNR211E (UN211E)
UNR211F (UN211F)
UNR211H (UN211H)
UNR211L (UN211L)
6K
6M
6N
6O
6P
6Q
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
UNR211M (UN211M) EI
2.2 k
UNR211N (UN211N) EW 4.7 k
UNR211T (UN211T) EY
22 k
UNR211V (UN211V) FC
2.2 k
UNR211Z (UN211Z) FE
4.7 k
(R2)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
47 k
47 k
47 k
2.2 k
22 k
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R1
B
R2
C
E
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
200
150
55 to +150
Unit
V
V
mA
mW
°C
°C
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00006CED
1









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UNR2112 Даташит, Описание, Даташиты
UNR211x Series
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR2110/2115/2116/2117
cutoff current UNR2113
VCBO
VCEO
ICBO
ICEO
IEBO
(Collector open) UNR2112/2114/211D/
211E/211M/211N/211T
UNR211Z
UNR2111
UNR211F/211H
UNR2119
UNR2118/211L/211V
Forward current UNR211V
transfer ratio UNR2118/211L
hFE
UNR2119/211D/211F/211H
UNR2111
UNUNR2112/211E
UNR211Z
UNR2113/2114/211M
UNR211N/211T
UNR2110*/2115*/2116*/2117*
Collector-emitter saturation voltage
UNR211V
VCE(sat)
Output voltage high-level
Output voltage low-level
UNR2113
VOH
VOL
UNR211D
UNR211E
Transition frequency
UNR2114/2119/211E
211F/211H
fT
Input resistance UNR2118
UNR2119
R1
UNR211H/211M/211V
UNR2116/211F/211L/211N/211Z
Conditions
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
IC = −10 mA, IB = − 0.3 mA
IC = −10 mA, IB = −1.5 mA
VCC = −5 V, VB = − 0.5 V, RL = 1 k
VCC = −5 V, VB = −2.5 V, RL = 1 k
VCC = −5 V, VB = −3.5 V, RL = 1 k
VCC = −5 V, VB = −10 V, RL = 1 k
VCC = −5 V, VB = −6 V, RL = 1 k
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 2 mA, f = 200 MHz
Min
50
50
6
20
30
35
60
60
80
80
160
4.9
30%
Typ Max
0.1
0.5
0.01
0.1
0.2
0.4
0.5
1.0
1.5
2.0
20
200
400
460
0.25
0.2
80
150
0.51 +30%
1.0
2.2
4.7
Unit
V
V
µA
µA
mA
V
V
V
MHz
k
UNR2111/2114/2115
UNR2112/2117/211T
UNR2110/2113/211D/211E
10
22
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
2 SJH00006CED









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UNR2112 Даташит, Описание, Даташиты
UNR211x Series
Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Resistance ratio UNR211M
UNR211N
Symbol
R1/R2
Conditions
Min Typ Max
0.047
0.1
Unit
UNR2118/2119
0.08 0.10 0.12
UNR211Z
0.21
UNR2114
0.17 0.21 0.25
UNR211H
0.17 0.22 0.27
UNR211T
0.47
UNR211F
0.37 0.47 0.57
UNR211V
1.0
UNR2111/2112/2113/211L
0.8 1.0 1.2
UNR211E
1.70 2.14 2.60
UNR211D
3.7 4.7 5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
250
200
150
100
50
0
0 40 80 120 160
Ambient temperature Ta (°C)
Characteristics charts of UNR2110
IC VCE
120
IB = −1.0 mA
Ta = 25°C
0.9 mA
100
0.8 mA
0.7 mA
0.6 mA
0.5 mA
80 0.4 mA
0.3 mA
100
10
60 1
0.2 mA
40
0.1 mA
0.1
20
VCE(sat) IC
IC / IB = 10
25°C
Ta = 75°C
25°C
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
0.01
0.1
1 10
Collector current IC (mA)
100
SJH00006CED
hFE IC
400
VCE = –10 V
300
Ta = 75°C
200 25°C
25°C
100
0
1
10
100
1 000
Collector current IC (mA)
3










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