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AMMP-6532 PDF даташит

Спецификация AMMP-6532 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «20-32 GHz GaAs MMIC LNA/IRM Receiver».

Детали детали

Номер произв AMMP-6532
Описание 20-32 GHz GaAs MMIC LNA/IRM Receiver
Производители AVAGO
логотип AVAGO логотип 

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AMMP-6532 Даташит, Описание, Даташиты
AMMP-6532
20-32 GHz GaAs MMIC LNA/IRM Receiver
in SMT Package
Data Sheet
Description
Avago Technologies’ AMMP-6532 is an easy-to-use
broadband integrated receiver in a surface mount
package. The MMIC includes a 4, -stage LNA to provide
gain amplification and a gate-pumped image-reject mixer
for frequency translation. The overall receiver performs
Single Side Band down-conversion in the 20 to 32 GHz RF
signal range. The LO and RF are matched to 50Ω. The IF
output is provided in 2-port format where an external 90-
degree hybrid can be utilized for full image rejection. The
LNA requires a 3V, 83mA power supply, where the mixer
bias is a simple –1V, 0.1mA. The MMIC is fabricated using
PHEMT technology. The surface mount package allows
elimination of “chip & wire” assembly for lower cost. This
MMIC is a cost effective alternative to multi-chip solution
that have higher loss and complex assembly.
Pin Connections (top View)
IF1 NC
12
IF2
3
RF 8
76
Vdd NC
Top view
Package base: GND
5
Vg
4 LO
Pin Function
1 IF1
2 NC
3 IF2
4 LO
5 Vg
6 NC
7 Vdd
8 RF
Note:
1. This MMIC uses depletion mode pHEMT devices.
2. Negative supply is used for mixer bias.
Features
Surface Mount Package (5.0 x 5.0 x 1.25 mm)
Integrated Low Noise Amplifier
Integrated Image Reject Mixer
50 Ω Input and Output Match
Single Supply Bias Pin
Specifications Vd=3.0V (83mA), Vg=-1.0V (0.1mA)
RF Frequency: 20 to 32 GHz
IF frequency: 1 to 5 GHz
Conversion Gain (RF/IF): 13dB
Input Intercept Point: -4dBm
Image Supression: > 15 db
Total Noise Figure: 3 dB
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
WLL and MMDS loops
Attention: Observe Precautions for
handling electrostatic sensitive devices.
ESD Machine Mode (Class A): 50V
(Class 0): 150V
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.









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AMMP-6532 Даташит, Описание, Даташиты
Absolute Maximum Ratings [1]
Symbol
Parameters/Condition
Units
Vdd Drain to Ground Voltage
V
Vg Gate to Ground Voltage
V
Idd Drain Current
mA
Ig Gate Current
mA
Pin RF CW Input Power Max
dB
Tch Max Channel Temperature
C
Tstg Storage Temperature
C
Tmax
Maximum Assembly Temp
C
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Max
5.5
+0.8
100
1
10
+150
-65 to +150
360 for 60s
DC Specifications/ Physical Properties [2]
Symbol
Parameters and Test Conditions
Units Min Typ Max
Vdd Drain Supply Voltage
V
35
Idd Drain Supply Current (Vd=4.0 V)
mA 60
90
Vg Gate Supply Voltage (Ig= 0.1mA)
V
-1.0
Tjc Thermal Resistance[3]
C/W
27
Notes:
2. Ambient operational temperature TA=25°C unless noted
3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) =
25°C calculated from measured data.
Operating Conditions
Symbol
RFfreq
LOfreq
IFfreq
LO
Parameters and Test Conditions
RF Frequency
LO Frequency
IF Frequency
LO Drive Power
Units
Minimum
Typical
Maximum
GHz 20
32
GHz 18
34
GHz 1
3.5
dBm +10 +15 +22
AMMP-6532 RF Specifications [4,5,6]
TA= 25°C, Vdd = 3.0 V, Idq =83 mA, Vg = -1V, Zo=50Ω, LO=+15 dBm, IF=2GHz.
Symbol
Parameters and Test Conditions Freq (GHz)
Unit
Minimum
Typical
Maximum
NF
Noise Figure into 50Ω [5]
RF=22,LO=24 dB
RF=30,LO=32
3 4.5
CG Conversion Gain[5]
RF=22,LO=24 dB
RF=30,LO=32
10
13
IIP3 Input Third
Order Intercept Point
RF=22,LO=24 dBm
RF=30,LO=32
-5
-4
SUP Image Rejection
RF=22,LO=24 dB
RF=30,LO=32
15
Notes:
4. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
5. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies
6. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.










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AMMP-6532 Даташит, Описание, Даташиты
AMMP-6532 Typical Performance
Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.
(TA = 25°C, Vdd=3V, Idq=83mA, Vg=-1.1 V, Zin = Zout = 50Ω)
20
10
0 LSB
USB
-10
-20 20 22 24 26 28 30 32
Frequency (GHz)
Figure 1. Receiver Conversion Gain
10
5
4
3
2
1
0 20 22 24 26 28 30 32
Frequency (GHz)
Figure 2. Typical Noise Figure
5
0
-10
RF
-20
LO
-30 15
20 25
Frequency (GHz)
Figure 3. Return Loss at RF & LO Ports
30
35
15
10
5
0
-5
-10
-15 -6
-2
2
6 10
LO Power (dBm)
Figure 5. Cony Gain vs. LO Power (RF=23GHz)
LSB
USB
14 18
0
-5
-10 20 22 24 26 28 30 32
Frequency (GHz)
Figure 4. Typical Input IP3
5
0
-5
-10
-15
-20 -6 -2 2
6 10 14 18
LO Power (dBm)
Figure 6. Input IP3 vs. LO Power (RF=23GHz)











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