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AMMP-6650 PDF даташит

Спецификация AMMP-6650 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «DC-30 GHz Variable Attenuator».

Детали детали

Номер произв AMMP-6650
Описание DC-30 GHz Variable Attenuator
Производители AVAGO
логотип AVAGO логотип 

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AMMP-6650 Даташит, Описание, Даташиты
AMMP-6650
DC – 30 GHz Variable Attenuator
Data Sheet
Description
The AMMP-6650 is a voltage controlled variable attenua-
tor in a surface mount package, designed to operate from
DC to 30 GHz. It is fabricated using Avago Technologies
enhancement mode pHEMT MMIC process and requires
only positive voltage control. The distributed topology
of the AMMP-6650 facilitates broadband operation by
absorbing parasitic effects of its series and shunt FETs.
An on-chip DC reference circuit may be used to maintain
optimum VSWR for any attenuation setting or to provide
more linear attenuation versus voltage response.
Package Diagram
DCin NC DCout
1 23
RFin 8
4 RFout
765
V1 NC V2
Features
x 5 x 5 mm Surface Mount Package
x Wide Frequency Range DC - 30 GHz
x Attenuation Range 20dB
x Single Positive Bias Supply
x Unconditionally Stable
Applications
x Microwave Radio Systems
x Satellite VSAT, DBS Up / Down Link
x LMDS & Pt – Pt mmW Long Haul
x Broadband Wireless Access (including 802.16 and 802.20
WiMax)
x WLL and MMDS loops
Functional Block Diagram
DCin NC DCout
12
3
RFin 8
DC
reference circuit
variable
attenuator
76
V1 NC
Top View
Note : Package base : GND
5
V2
Pin Function
1 DC in
2 NC
3 DC out
4 RFout 4 RF out
5 V2
6 NC
7 V1
8 RF in
RoHS-Exemption
Please refer to hazardous substances table on page 9.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 80 V
ESD Human Body Model = 400 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note: MSL Rating = Level 2A









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AMMP-6650 Даташит, Описание, Даташиты
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Data obtained from on-wafer measurement
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)
matching.
Table 1. RF Electrical Characteristics [1,2]
Symbol
Parameters and Test Conditions
Minimum Attenuation
(Reference State)
|S21|
V1 = 1.5 V
V2 = 0.0 V
Maximum Attenuation
|S21|
V1 = 0.0 V
V2 = 1.25 V
Return Loss (In/Out)
at Reference State
Return Loss (In/Out)
at Max. Attenuation
V1=1.5 V, V2=0.0 V
V1=0.0 V, V2=1.25 V
Units
dB
dB
dB
Freq. [GHz]
2
10
20
30
2
10
20
30
<30
Minimum
23
23
23
23
dB <30
Typical
0.9
2.0
0.9
2.1
26.6
28.0
30.0
35.6
10
10
Maximum
1.5
2.5
2.5
3.0
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Data obtained from on-wafer measurement
Parameter
Min. Typical
V1 Control Current (Min Attenuation), Ic_V1_ref
1.93
V2 Control Current (Min Attenuation), Ic_V2_ref
0.8
V1 Control Current (Max Attenuation), Ic_V1_max
1.1
V2 Control Current (Max Attenuation), Ic_V2_max
1.41
Max.
2.0
2.5
2.5
1.5
Unit Test Condition
mA Vse=1.2V, Vsh=0
uA Vse=0V, Vsh=1.2V
uA Vse=0V, Vsh=1.2V
mA Vse=1.2V, Vsh=0
Table 3. Absolute Minimum and Maximum Ratings [1]
Parameter
Min. Max. Unit Comments
Voltage to Control VSWR, V1
0 1.6 V
Voltage to Control Attenuation, V2
0
1.6 V
RF Input Power, Pin
17 dBm
Operating Channel Temperature, Tch
+150
dB
Storage Temperature, Tstg
-65
+150
°C
Maximum Assembly Temperature, Tmax
300 °C 60 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings for V1, V2 and
Pin were determined at an ambient temperature of 25°C unless noted otherwise..
2









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AMMP-6650 Даташит, Описание, Даташиты
Typical Performance (TA = 25°C, Zin = Zout = 50 :)
0
10
20
30
40
50
0 5 10 15 20 25 30
Frequency (GHz)
Figure 1. Attenuation vs Frequency
Min
Min+2dB
Min+4dB
Min+8dB
Min+12dB
Min+16dB
Min+20dB
Max
0
-10
-20
-30
-40
-50
0
5 10 15 20
Frequency (GHz)
Figure 2. Input Return Loss vs Frequency
Min
Max
25 30
0
-10
-20
-30
-40
-50
0
5 10 15 20
Frequency (GHz)
Figure 3. Output Return Loss vs Frequency
Min
Max
25 30
30
25
20
15
10
5
0
0 10 20
Attenuation (dB)
Figure 4. IIP3 vs Attenuation at 2 GHz (note 2)
30
25
20
15
10
5
0
0 10 20
Attenuation (dB)
Figure 5. IIP3 vs Attenuation at 12 GHz (note 2)
30
25
20
15
10
5
0
30 0
10 20
Attenuation (dB)
Figure 6. IIP3 vs Attenuation at 22 GHz (note 2)
30
30
3










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Номер в каталогеОписаниеПроизводители
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