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Número de pieza | STB6N65M2 | |
Descripción | N-channel Power MOSFETs | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STB6N65M2,
STD6N65M2
N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2
Power MOSFETs in D2PAK and DPAK packages
Datasheet - preliminary data
Features
TAB
3
1
D2 PAK
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
, TAB
Order codes
STB6N65M2
STD6N65M2
VDS RDS(on) max
650 V
1.35 Ω
ID
4A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Order codes
STB6N65M2
STD6N65M2
Table 1. Device summary
Marking
Package
6N65M2
D2PAK
DPAK
Packaging
Tape and reel
August 2014
DocID026762 Rev 1
1/23
www.st.com
1 page STB6N65M2, STD6N65M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4 A, VGS = 0
- 4A
- 16 A
- 1.6 V
trr Reverse recovery time
- 260
Qrr Reverse recovery charge
ISD = 4 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 15)
-
1.2
IRRM Reverse recovery current
- 9.2
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 15)
- 400
- 1.84
- 9.1
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID026762 Rev 1
5/23
23
5 Page STB6N65M2, STD6N65M2
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
mm
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0°
Typ.
2.54
0.4
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
DocID026762 Rev 1
11/23
23
11 Page |
Páginas | Total 23 Páginas | |
PDF Descargar | [ Datasheet STB6N65M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STB6N65M2 | N-channel Power MOSFETs | STMicroelectronics |
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