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RQ3E080GN PDF даташит

Спецификация RQ3E080GN изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «N-ch 30V 8A Power MOSFET».

Детали детали

Номер произв RQ3E080GN
Описание N-ch 30V 8A Power MOSFET
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RQ3E080GN Даташит, Описание, Даташиты
RQ3E080GN
Nch 30V 8A Power MOSFET
Datasheet
VDSS
RDS(on) at 10V (Max.)
RDS(on) at 4.5V (Max.)
ID
PD
30V
16.7mW
22.8mW
8A
2.0W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
5) 100% Rg and UIS Tested
lOutline
HSMT8
lInner circuit
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
*1 BODY DIODE
lPackaging specifications
Packaging
Taping
lApplication
DC/DC converters
Load switch
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
330
12
3,000
TB
Marking
E080GN
lAbsolute maximum ratings(Ta = 25°C) ,unless otherwise specified
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
Tj
30
8
32
20
2.0
150
Range of storage temperature
Tstg -55 to +150
Unit
V
A
A
V
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/10
2013.02 - Rev.A









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RQ3E080GN Даташит, Описание, Даташиты
RQ3E080GN
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJC
Values
Min. Typ. Max.
Unit
- - 62.5 °C/W
- - - °C/W
lElectrical characteristics(Ta = 25°C) ,unless otherwise specified
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
30 -
-
Unit
V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID=1mA
ΔTj referenced to 25°C
- 26.2 - mV/°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
VGS (th)
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = VGS, ID = 1mA
-
-
1.2
- 1 mA
- 100 nA
- 2.5 V
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID=1mA
ΔTj referenced to 25°C
- -4.0 - mV/°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on) *4
VGS=10V, ID=8A
VGS=4.5V, ID=8A
RG f = 1MHz, open drain
gfs *4 VDS=5V, ID=8A
- 12.9 16.7
mW
- 17.5 22.8
- 2.5 -
W
7.0 - - S
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a Ceramic Board (30×30×0.8mm)
*4 Pulsed
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/10
2013.02 - Rev.A









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RQ3E080GN Даташит, Описание, Даташиты
RQ3E080GN
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on) *4
tr *4
td(off) *4
tf *4
VGS = 0V
VDS = 15V
f = 1MHz
VDD 15V, VGS = 10V
ID = 4A
RL = 3.75W
RG = 10W
Data Sheet
Values
Min. Typ. Max.
- 295 -
- 89 -
- 24 -
- 6.9 -
- 3.6 -
- 17.3 -
- 2.4 -
Unit
pF
ns
lGate Charge characteristics(Ta = 25C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *4
VDD 15V, ID=8A
VGS = 10V
Qgs *4
Qgd *4
VDD 15V, ID=8A
VGS = 4.5V
Values
Min. Typ. Max.
Unit
- 5.8
-
- 2.8 - nC
- 1.4
- 0.7
-
-
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Forward voltage
Reverse recovery time
Reverse recovery charge
IS *1 Ta = 25°C
VSD *4
trr *4
Qrr *4
VGS = 0V, Is =1.67A
IS=8A
di/dt=100A/ms
- - 1.67
- - 1.2
- 16.8
-
- 8.1 -
Unit
A
V
ns
nC
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/10
2013.02 - Rev.A










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Номер в каталогеОписаниеПроизводители
RQ3E080GNN-ch 30V 8A Power MOSFETROHM Semiconductor
ROHM Semiconductor

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