RQ3E080GN PDF даташит
Спецификация RQ3E080GN изготовлена «ROHM Semiconductor» и имеет функцию, называемую «N-ch 30V 8A Power MOSFET». |
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Детали детали
Номер произв | RQ3E080GN |
Описание | N-ch 30V 8A Power MOSFET |
Производители | ROHM Semiconductor |
логотип |
11 Pages
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RQ3E080GN
Nch 30V 8A Power MOSFET
Datasheet
VDSS
RDS(on) at 10V (Max.)
RDS(on) at 4.5V (Max.)
ID
PD
30V
16.7mW
22.8mW
8A
2.0W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
5) 100% Rg and UIS Tested
lOutline
HSMT8
lInner circuit
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
*1 BODY DIODE
lPackaging specifications
Packaging
Taping
lApplication
DC/DC converters
Load switch
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
330
12
3,000
TB
Marking
E080GN
lAbsolute maximum ratings(Ta = 25°C) ,unless otherwise specified
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
Tj
30
8
32
20
2.0
150
Range of storage temperature
Tstg -55 to +150
Unit
V
A
A
V
W
°C
°C
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© 2013 ROHM Co., Ltd. All rights reserved.
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RQ3E080GN
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJC
Values
Min. Typ. Max.
Unit
- - 62.5 °C/W
- - - °C/W
lElectrical characteristics(Ta = 25°C) ,unless otherwise specified
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
30 -
-
Unit
V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID=1mA
ΔTj referenced to 25°C
- 26.2 - mV/°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
VGS (th)
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = VGS, ID = 1mA
-
-
1.2
- 1 mA
- 100 nA
- 2.5 V
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID=1mA
ΔTj referenced to 25°C
- -4.0 - mV/°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on) *4
VGS=10V, ID=8A
VGS=4.5V, ID=8A
RG f = 1MHz, open drain
gfs *4 VDS=5V, ID=8A
- 12.9 16.7
mW
- 17.5 22.8
- 2.5 -
W
7.0 - - S
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a Ceramic Board (30×30×0.8mm)
*4 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
2/10
2013.02 - Rev.A
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RQ3E080GN
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on) *4
tr *4
td(off) *4
tf *4
VGS = 0V
VDS = 15V
f = 1MHz
VDD ⋍ 15V, VGS = 10V
ID = 4A
RL = 3.75W
RG = 10W
Data Sheet
Values
Min. Typ. Max.
- 295 -
- 89 -
- 24 -
- 6.9 -
- 3.6 -
- 17.3 -
- 2.4 -
Unit
pF
ns
lGate Charge characteristics(Ta = 25C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *4
VDD ⋍ 15V, ID=8A
VGS = 10V
Qgs *4
Qgd *4
VDD ⋍ 15V, ID=8A
VGS = 4.5V
Values
Min. Typ. Max.
Unit
- 5.8
-
- 2.8 - nC
- 1.4
- 0.7
-
-
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Forward voltage
Reverse recovery time
Reverse recovery charge
IS *1 Ta = 25°C
VSD *4
trr *4
Qrr *4
VGS = 0V, Is =1.67A
IS=8A
di/dt=100A/ms
- - 1.67
- - 1.2
- 16.8
-
- 8.1 -
Unit
A
V
ns
nC
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© 2013 ROHM Co., Ltd. All rights reserved.
3/10
2013.02 - Rev.A
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Номер в каталоге | Описание | Производители |
RQ3E080GN | N-ch 30V 8A Power MOSFET | ROHM Semiconductor |
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