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AMGP-6432 PDF даташит

Спецификация AMGP-6432 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «28-31 GHz 2W SMT Packaged Power Amplifier».

Детали детали

Номер произв AMGP-6432
Описание 28-31 GHz 2W SMT Packaged Power Amplifier
Производители AVAGO
логотип AVAGO логотип 

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AMGP-6432 Даташит, Описание, Даташиты
AMGP-6432
28-31 GHz 2W SMT Packaged Power Amplifier
Data Sheet
Description
The AMGP-6432 is a surface mount packaged 2-Watt
power amplifier that operates from frequencies between
28 to 31 GHz.  In the operational frequency band from
29.25 to 30 GHz, it provides 33 dBm of typical output
power (P1dB)/ 34 dBm Psat and 21.5dB of small-signal
gain.  This PA is also suitable for high linear application
where the PA demonstrates greater than than -38dBc of
third order output inter modulation (OIM3) at +18dBm/
tone output power level.
Functional Block Diagram
123
84
765
Pin Function
1 Vg
2 Vd1
3 Vd2
4 RF_OUT
5 Vd2
6 Vd1
7 Vg
8 RF_IN
Features
 5 x 5 mm surface mount package
 > +33 dBm Output Power from 28.5 to 31 GHz
 50 input and output match
 -40° C to +85° C operation
Applications
 VSAT
 Microwave Radio System
 Satellite Up/Down Link
Export License Control: ECCN 3A001.b.2.c
Package Diagram
Vg Vd1 Vd2
1 23
RF_IN 8
4 RF_OUT
Attention: Observe Precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A): 60 V
ESD Human Body Model (Class 1A): 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
7 65
Vg Vd1 Vd2









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AMGP-6432 Даташит, Описание, Даташиты
ELECTRICAL SPECIFICATIONS
Table 1. Absolute Minimum and Maximum [1] Ratings
Parameter
Specifications
Comments
Description
Pin Min. Max. Unit
Drain Supply Voltage
Gate Supply Voltage
RF Input Power (Pin) [2]
Vd1
Vd2
Vg
RFIN
-2
6.5 V
0V
24 dBm CW
Power Dissipation (Pdiss)
10 W
Pdiss = Vd1 x Id1 + Vd2 x Id2 + Pin - Pout
MSL MSL2
TCH
150 °C
Channel Temperature
TSTG
-65 150 °C
Storage Temperature
Notes:
1. Operation of this device above any one of these maximum parameters may cause permanent damage
2. With the DC (typical bias) and RF applied to the device at board temperature Tb= 25° C
Table 2. Recommended Operating Range
Parameter
Description
Drain Supply Voltage
Gate Supply Voltage
Maximum Gate Current
Pin
Vd1
Vd2
Vg
Ig, max
Quiescent Drain Supply
Current (Idq)
RF Output Power (Pout)
Frequency Range
Thermal Resistance, ch-b
Base Plate Temperature
ESD Human Body Model
Machine Model
Vd1
Vd2
RFOUT
Specifications
Min. Typical
6.0
-0.1 -0.83
-3 -2.5
300
400
33
28
7.6
-40
200
60
Max.
-0.6
31
+85
Unit
V
V
mA
mA
dBm
GHz
°C/W
°C
V
V
Comments
Ig, max occurs at highest
RF Pout condition.
Idq = Id1 + Id2
CW
Channel to board
2









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AMGP-6432 Даташит, Описание, Даташиты
Electrical Specifications
All data measured on a 2.4 mm connectorized production contactor board (Rogers 4350B) at Vdd1 = Vdd2 = 6 V, Idq = 0.7 A
(Idq1 + Idq2), Tc = 25° C, and 50 at all ports unless otherwise stated
Table 3. RF Electrical Characteristics
Performance
Parameter
Min. Typical Max. Unit
Frequency Range (GHz)
28
31 GHz
Input Return Loss (dB)
-15 dB
Output Return Loss (dB)
-12 dB
Gain (dB) [1] @ Freq = 29.25 GHz
(Pin = 0 dBm) @ Freq = 30 GHz
Reverse Isolation (dB)
18 21.5 25 dB
18 21.3 25
-50 dB
Pout [1]
(Pin = 17 dBm)
P1dB [2]
@ Freq = 29.25 GHz
@ Freq = 30 GHz
@ Freq = 29.25 GHz
@ Freq = 30 GHz
33
33
32
32
34.8
34.3
33.9
32.9
dBm
IM3 Level
-38 dBc
Total Drain Current
0.7 A
Note:
1. Pout & Gain measurement accuracy is subjected to the tolerance of ±0.5 dBm respectively.
2. Guaranteed by design
Comments
Small Signal
Small Signal
Vdd = 6 V, Idq = 0.7 A
Vdd = 6 V, Idq = 0.7 A
Small Signal
Vdd = 6V , Idq = 0.7 A
Vdd = 6 V, Idq = 0.7 A
Vdd = 6 V, Idq = 0.7 A
Vdd = 6 V, Idq = 0.7 A
f = 20 MHz, Pout = 20 dBm/tone
Idq
3










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