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AVT-53663 PDF даташит

Спецификация AVT-53663 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «DC - 6000 MHz InGaP HBT Gain Block».

Детали детали

Номер произв AVT-53663
Описание DC - 6000 MHz InGaP HBT Gain Block
Производители AVAGO
логотип AVAGO логотип 

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AVT-53663 Даташит, Описание, Даташиты
AVT-53663
DC – 6000 MHz
InGaP HBT Gain Block
Data Sheet
Description
Avago Technologies’ AVT-53663 is an economical, easy-
to-use, general purpose InGaP HBT MMIC gain block
amplifier utilizing Darlington pair configuration housed in
a 6-lead (SOT-363) surface mount plastic package.
The Darlington feedback structure provides inherent
broad bandwidth performance, resulting in useful
operating frequency up to 6 GHz. This is an ideal device
for small-signal gain cascades or IF amplification.
AVT-53663 is fabricated using advanced InGaP HBT
(Hetero-junction Bipolar Transistor) technology that offers
state-of-the-art reliability, temperature stability and per-
formance consistency.
Component Image
GND
GND
Input
Notes:
Output Package marking provides
& Vd orientation and identification
GND
“53” = Device Code
“X” = Month of Manufacture
” = Pin 1
GND
Top View
Typical Biasing Configuration
VCC = 5V
Rbias Cbyp Cbyp Rbias = (VCC - Vd)/Id
RFin Cblock
Pin 3
Pin 6 RFout
Vd Cblock
Pin 1, 2, 4, 5
(GND)
Features
Small signal gain amplifier
Operating frequency DC to 6 GHz
Unconditionally stable
50 Ohm input & output
Flat, Broadband Frequency Response up to 2 GHz
Industry standard SOT-363
Lead-free, RoHS compliant, Green
Specifications
2 GHz, 5V Vcc, 48mA (typical)
19.5 dB Gain
15.1 dBm P1dB
26.5 dBm OIP3
3.2 dB NF
10 dB IRL and ORL
Applications
Cellular / PCS / 3G base station
Wireless Data / WLAN
WiMAX / WiBRO
CATV & Cable modem
ISM
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 160 V
ESD Human Body Model = 2000 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.









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AVT-53663 Даташит, Описание, Даташиты
Absolute Maximum Rating[1] TA=25°C
Symbol
Id
PIN,MAX
PDISS
TOPT
TJ,MAX
TSTG
Parameter
Device Current
CW RF Input Power
Total Power Dissipation [3]
Operating Temperature
Junction Temperature
Storage Temperature
Units
mA
dBm
mW
°C
°C
°C
Absolute Max.
80
18
327
-40 to 85
150
-65 to 150
Thermal Resistance
Thermal Resistance [2] θJB = 184°C/W
(Id = 48 mA, TC = 85°C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
measurement technique.
3. Ground lead temperature is 25°C. Derate
5.5mW/°C for TC >90°C.
Electrical Specifications [1]
TA = 25°C, Zo = 50 Ω, VCC = 5 V, Rbias = 22 Ω, Pin = -15 dBm (unless specified otherwise)
Symbol
Parameter and Test Condition
Frequency Units
Min.
Typ.
Id Device Current
mA 44.0 47.6
Gp Power Gain
900 MHz
2000 MHz
dB
21.8
18.0 19.5
OIP3 [2]
Output 3rd Intercept Point
900 MHz
2000 MHz
dBm
25.0
28.9
26.5
S11 Input Return Loss, 50Ω source
900 MHz
2000 MHz
dB
-16.5
-12.0
S22 Output Return Loss, 50Ω load
900MHz
2000 MHz
dB
-17.3
-13.4
S12 Reverse Isolation
900 MHz
2000 MHz
dB
-24.3
-24.7
P1dB
Output Power at 1dB Gain Compression
900 MHz
2000 MHz
dBm
16.0
15.1
NF Noise Figure
900 MHz
2000 MHz
dB
2.9
3.2
Notes:
1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
2. OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -23 dBm per tone measured at worse side band.
Max.
51.0
21.0
2









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AVT-53663 Даташит, Описание, Даташиты
VCC
Rbias
RFin
Zo = 50 Ohm
Pin 3
Bias Tee
Pin 6
Zo = 50 Ohm
Pin 1, 2, 4, 5
(GND)
RFout
Figure 1. Block diagram of board used for Id, Gain, OIP3, S11, S22, S12, OP1dB and NF measurements.
Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts at 2 GHz, Vcc = 5 V, Rbias = 22 Ω
LSL USL LSL
USL
43 44 45 46 47 48 49 50 51
Figure 2. Id (mA) distribution. LSL = 44.5, Nominal = 47.6, USL = 50.5
18 19 20 21
Figure 3. Gain (dB) distribution. LSL = 18, Nominal = 19.5, USL = 21
LSL
25 26 27
Figure 4. OIP3 (dBm) distribution. LSL = 25.5, Nominal = 26.6
28
Notes:
1. Statistical distribution determined from a sample size of 1500
samples taken from 3 different wafers from 2 wafer lots, measured on
a production test board.
2. Future wafers allocated to this product may have typical values
anywhere between the minimum and maximum specification limits.
3










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AVT-53663DC - 6000 MHz InGaP HBT Gain BlockAVAGO
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