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IPB80N06S2-09 PDF даташит

Спецификация IPB80N06S2-09 изготовлена ​​​​«Infineon Technologies» и имеет функцию, называемую «Power-Transistor».

Детали детали

Номер произв IPB80N06S2-09
Описание Power-Transistor
Производители Infineon Technologies
логотип Infineon Technologies логотип 

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IPB80N06S2-09 Даташит, Описание, Даташиты
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N06S2-09
IPP80N06S2-09
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
8.8 m
80 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB80N06S2-09
IPP80N06S2-09
Package
PG-TO263-3-2
PG-TO220-3-1
Ordering Code Marking
SP0002-18741 2N0609
SP0002-18740 2N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D= 80 A
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
370
±20
190
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-13









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IPB80N06S2-09 Даташит, Описание, Даташиты
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
IPB80N06S2-09
IPP80N06S2-09
min.
Values
typ.
Unit
max.
- - 0.8 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=125 µA
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
I GSS
RDS(on)
V DS=55 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=50 A,
V GS=10 V, I D=50 A,
SMD version
55
2.1
-
-
-
-
-
-
3.0
0.01
1
1
7.6
7.3
-V
4.0
1 µA
100
100 nA
9.1 m
8.8
Rev. 1.0
page 2
2006-03-13









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IPB80N06S2-09 Даташит, Описание, Даташиты
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
IPB80N06S2-09
IPP80N06S2-09
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=80 A, R G=4.7
-
-
-
-
-
-
-
2360
610
150
14
29
39
28
- pF
-
-
- ns
-
-
-
Q gs - 12 16 nC
Q gd V DD=44 V, I D=80 A,
Q g V GS=0 to 10 V
-
-
24 37
60 80
V plateau
- 5.5 - V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
t rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
- - 80 A
- - 320
- 0.9 1.3 V
- 50 63 ns
Reverse recovery charge2)
Q rr
- 76 95 nC
1) Current is limited by bondwire; with an R thJC = 0.8 K/W the chip is able to carry 99 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) See diagram 13.
4) Qualified at -20V and +20V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-13










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