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ALM-32320 PDF даташит

Спецификация ALM-32320 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «3.3GHz - 3.9GHz 2 Watt High Linearity Amplifier».

Детали детали

Номер произв ALM-32320
Описание 3.3GHz - 3.9GHz 2 Watt High Linearity Amplifier
Производители AVAGO
логотип AVAGO логотип 

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ALM-32320 Даташит, Описание, Даташиты
ALM-32320
3.3GHz – 3.9GHz
2 Watt High Linearity Amplifier
Data Sheet
Description
Avago Technologies’ ALM-32320 is a high linearity 2 Watt
PA with good OIP3 performance and exceptionally good
PAE at 1dB gain compression point, achieved through the
use of Avago Technologies’ proprietary 0.25um GaAs En-
hancement-mode pHEMT process.
All matching components are fully integrated within the
module. This makes the ALM-32320 extremely easy to use.
The adjustable temperature-compensated internal bias
circuit allows the device to be operated at either class A
or class AB operation. The ALM-32320 is housed inside a
miniature 7.0 x 10.0 x 1.1 mm3 20-lead multiple-chips-on-
board (MCOB) module package.
Component Image
7.0 x 10.0 x 1.1mm3 20-Lead MCOB Package
Vdd1 Vctrl
18 19
20
17 1
32320
WWYY
XXXX
Top View
16 2
15 3
RF OUT 14
4 RF IN
13 5
12 6
11 7
10 9
8
Vdd2 Not Used
Bottom View
Note:
Package marking provides orientation and identification
“32320” = Device Part Number
“WWYY” = Work week and year of manufacture
“XXXX” = Last 4 digit of lot number
Features
Fully matched, input and output
High linearity and P1dB
Unconditionally stable across load condition
Built-in adjustable temperature compensated internal
bias circuitry
GaAs E-pHEMT Technology[1]
5V supply
Excellent uniformity in product specifications
Tape-and-Reel packaging option available
MSL-3 and Lead-free
High MTTF for base station application
Specifications
3.5GHz; 5V, 810mA (typical)
12.6 dB Gain
51.0 dBm Output IP3
34.5 dBm Output Power at 1dB Gain Compression
46.6% PAE at P1dB
2.5dB Noise Figure
Applications
Class A driver amplifier for WiMAX base stations.
General purpose gain block.
Note:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
2. Good RF practice requires all unused pins to be earthed.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 80 V
ESD Human Body Model = 800 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.









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ALM-32320 Даташит, Описание, Даташиты
Absolute Maximum Rating[2] TA=250C
Symbol
Vdd,max
Ids,max
Vctrl,max
Pin,max
Pdiss
Tj, max
TSTG
Parameter
Device Voltage, RF output to ground
Device Drain Current
Control Voltage
CW RF Input Power
Total Power Dissipation [4]
LSLJunction Temperature
USL
Storage Temperature
LSL USL
Product Consistency Distribution Charts[5]
Units
V
mA
V
dBm
W
°C
°C
Absolute
Max.
5.5
1500
5.5
28
8.25
150LSL
-65 to 150
LSL
Thermal Resistance [3] θjc = 15ºC/W
(Vdd = 5V, Ids = 810mA, Tc = 85°C)
Notes:
2. Operation of this device in excess of any of
these limits may cause permanent damage.
3. Thermal resistance measured using Infra-Red
measurement technique.
4. This is limited by maximum Vdd and Ids.
Derate 66.7mW/ 0C for Tc > 26.20C.
LSL USL LSL
.600 .700 .800 .900 1.000 47 48 49 50 51 52 53 54 55
CPK = 0.80
CPK = 0.95
Std Dev = 0.04
Std Dev = 0.889
.600 .700 .800 .900 1.000 47 48 49 50 51 52 53 54 55
.600 .700 .800 .900
Figure 1. Ids; LSL = 690mA, nominal = 810mA, USL = 910mA
LSL
1.000
47 48 49 50 51 52
Figure 2. OIP3; LSL = 48dBm, nominal = 51dBm
53 54
55
LSL
CPK = 2.495
Std Dev = 0.134
LSL
32.5 33 33.5
34 34.5
35 35.5
Std Dev = 1.504
40 42 44 46 48 50 52 54
32.5 33 33.5 34 34.5
Figure 3. P1dB; LSL = 33dBm, nominal = 34.5dBm
32.5 33 33.5 34 34.5
LSL
CPK = 2.011
LSLStd Dev = 0.184
35 35.5
35 35.5
USL
USL
LSL USL
11 11.5
12 12.5
13 13.5
14 14.5
Figure 5. Gain; LSL=11.2dB, Nominal = 12.6dB, USL=14.2dB
11 11.5
2
12 12.5
13 13.5
14 14.5
40 42 44 46 48 50 52 54
Figure 4. PAE at P1dB; nominal = 46.6%
40 42 44 46 48 50 52 54
Note:
5. Distribution data sample size is 500 samples taken from 3 different
wafer lots. TA = 25°C, Vdd = 5V, Vctrl = 5V, RF performance at 3.5GHz
unless otherwise specified. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
6. Measurements are made on a production test board. Input trace
losses have not been de-embedded from actual measurements.









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ALM-32320 Даташит, Описание, Даташиты
Electrical Specifications [7]
TA = 25 *C, Vdd =5V, Vctrl =5V, RF performance at 3.5GHz, measured on demo board (see Figure 7) unless otherwise
specified.
Symbol
Parameter and Test Condition
Units Min. Typ. Max.
Ids Quiescent current
mA 690 810 910
Ictrl Vctrl current
mA -
28 -
Gain Gain
dB 11.2 12.6 14.2
OIP3 [8]
Output Third Order Intercept Point
dBm 48.0 51.0 -
OP1dB
Output Power at 1dB Gain Compression
dBm
33.0
34.5
-
PAE Power Added Efficiency
%-
46.6 -
NF Noise Figure
dB -
2.5 -
S11 Input Return Loss, 50Ω source
dB -
-9.0 -
S22 Output Return Loss, 50Ω load
dB -
-12.0
-
S12 Reverse Isolation
dB -
-26.5
-
Notes:
7. Measurements at 3.5GHz obtained using demo board described in Figure 6 and 7.
8. OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -5dBm per tone measured at worst side band
9. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note (if applicable) for more details.
3










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