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PDF Si4425DDY Data sheet ( Hoja de datos )
| Número de pieza | Si4425DDY | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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P-Channel 30-V (D-S) MOSFET
Si4425DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0098 at VGS = 10 V
- 30
0.0165 at VGS = 4.5 V
ID (A)a
- 19.7
- 15.2
Qg (Typ.)
27 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
S
G
Top View
Ordering Information: Si4425DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 30
± 20
- 19.7
- 15.7
- 13b, c
- 10.4b, c
- 50
- 4.7
- 2.1b, c
5.7
3.6
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
35
18
Maximum
50
22
Unit
°C/W
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09
www.vishay.com
1
1 page  
Si4425DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
24
20
16
12
8
4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
8 1.8
1.5
6
1.2
4 0.9
0.6
2
0.3
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09
www.vishay.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si4425DDY.PDF ] | |
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