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PDF NTBV75N06 Data sheet ( Hoja de datos )
| Número de pieza | NTBV75N06 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTP75N06, NTB75N06,
NTBV75N06
Power MOSFET
75 Amps, 60 Volts, N−Channel
TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• These Devices are Pb−Free and are RoHS Compliant
• NTBV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
75
50
225
214
1.4
2.4
−55 to
+175
Adc
Apk
W
W/°C
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 75 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJC
RqJA
TL
844 mJ
°C/W
0.7
62.5
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
75 AMPERES, 60 VOLTS
RDS(on) = 9.5 mW
N−Channel
D
G
S
MARKING
DIAGRAMS
4
Drain
4
TO−220
CASE 221A
STYLE 5
75N06
AYWW
12
3
1
Gate
3
Source
2
Drain
4
Drain
2
1
3
4 D2PAK
CASE 418B
STYLE 2
75N06
AYWW
1
Gate
2
Drain
3
Source
75N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 3
1
Publication Order Number:
NTP75N06/D
1 page  
NTP75N06, NTB75N06, NTBV75N06
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
0.0001
P(pk)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
DUTY
t2
CYCLE,
D
=
t1/t2
READ TIME
TJ(pk) − TC =
AT t1
P(pk)
RqJC(t)
0.001
0.01
t, TIME (ms)
Figure 13. Thermal Response
0.1
1.0 10
ORDERING INFORMATION
Device
Package
Shipping†
NTP75N06G
TO−220
(Pb−Free)
50 Units/Rail
NTB75N06G
D2PAK
(Pb−Free)
50 Units/Rail
NTB75N06T4G
D2PAK
(Pb−Free)
800 Tape & Reel
NTBV75N06T4G*
D2PAK
(Pb−Free)
800 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NTBV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTBV75N06.PDF ] | |
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