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What is OM55N10SC?

This electronic component, produced by the manufacturer "Omnirel", performs the same function as "POWER MOSFETS".


OM55N10SC Datasheet PDF - Omnirel

Part Number OM55N10SC
Description POWER MOSFETS
Manufacturers Omnirel　
Logo Omnirel Logo　


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OM55N10SC OM60N10SC OM75N05SC OM75N06SC
OM55N10SA OM75N05SA OM75N06SA
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V, 60V, And 100V Ultra Low RDS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low RDS(on)
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
PART NO.
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
VDS (V)
100
100
100
60
60
50
50
RDS(on) ( )
.025
.030
.035
.016
.018
.016
.018
SCHEMATIC
Drain
ID (A)
60
55
55
75
75
75
75
Package
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
PIN CONNECTION
TO-254AA
TO-258AA
3.1
Gate
Source
4 11 R1
Supersedes 2 07 R0
3.1 - 47
1
Pin 1:
Pin 2:
Pin 3:
23
Drain
Source
Gate
123
Pin 1: Drain
Pin 2: Source
Pin 3: Gate

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OM55N10SC equivalent
OM75N06SA (TC = 25°C unless otherwise specified)
Avalanche Characteristics
IAR Avalanche Current
Min.
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
IGSS Gate-Body Leakage
Current (VDS = 0)
Electrical Characteristics - ON*
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On
Resistance
ID(on) On State Drain Current
Electrical Characteristics - Dynamic
gfs Forward Transconductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Td(on) Turn-On Time
tr Rise Time
(di/dt)on Turn-On Current Slope
60
2
75
25
Qg Total Gate Charge
Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time
tf Fall Time
tcross Cross-Over Time
Electrical Characteristics - Source Drain Diode
ISD Source Drain Current
ISDM* Source Drain Current (pulsed)
VSD Forward On Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Typ. Max. Units
70 A
900 mJ
200 mJ
40 A
V
250 µA
1000 µA
±100 nA
4
0.018
0.036
V
A
4100
1800
420
S
pF
pF
pF
190 nS
900 nS
150 A/µS
130 nC
360 nS
280 nS
600 nS
75
300
1.5
120
A
A
V
nS
0.45 µC
6.5 A
Test Conditions
(repetitive or
non-repetitive,TJ = 25°C)
(starting TJ = 25°C,
ID = IAR, VDD = 25 V)
(pulse width limited
by Tj max, d < 1%)
(repetitive or
non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x R ,DS(on)max VGS = 10 V
VDS > ID(on) x R ,DS(on)max ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 25 V, ID = 40 A, VGS = 10 V
VDD = 40 V, ID = 75 A
RG = 50 , VGS = 10 V
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 25 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM75N05SC (TC = 25°C unless otherwise specified)
Avalanche Characteristics
IAR Avalanche Current
Min.
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
IAR Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
IGSS Gate-Body Leakage
Current (VDS = 0)
Electrical Characteristics - ON*
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On
Resistance
ID(on) On State Drain Current
Electrical Characteristics - Dynamic
gfs Forward Transconductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Electrical Characteristics - Switching On
Td(on) Turn-On Time
tr Rise Time
(di/dt)on Turn-On Current Slope
50
2
75
25
Qg Total Gate Charge
Electrical Characteristics - Switching Off
Tr(Voff) Off Voltage Rise Time
tf Fall Time
tcross Cross-Over Time
Electrical Characteristics - Source Drain Diode
ISD Source Drain Current
ISDM* Source Drain Current (pulsed)
VSD Forward On Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Typ. Max. Units
70 A
900 mJ
200 mJ
40 A
V
250 µA
1000 µA
±100 nA
4
0.016
0.032
V
A
4100
1800
420
S
pF
pF
pF
190 nS
900 nS
150 A/µS
130 nC
360 nS
280 nS
600 nS
75
300
1.5
120
A
A
V
nS
0.45 µC
6.5 A
Test Conditions
(repetitive or
non-repetitive,TJ = 25°C)
(starting TJ = 25°C,
ID = IAR, VDD = 25 V)
(pulse width limited
by Tj max, d < 1%)
(repetitive or
non-repetitive, TJ = 100°C)
ID = 250 µA, VGS = 0
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x R ,DS(on)max VGS = 10 V
VDS > ID(on) x R ,DS(on)max ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
VDD = 20 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 20 V, ID = 40 A
RG = 50 , VGS = 10 V
VDD = 20 V, ID = 40 A, VGS = 10 V
VDD = 35 V, ID = 75 A
RG = 50 , VGS = 10 V
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 20 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.


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Featured Datasheets

Part NumberDescriptionMFRS
OM55N10SAThe function is POWER MOSFETS. OmnirelOmnirel
OM55N10SCThe function is POWER MOSFETS. OmnirelOmnirel

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