ESD5Z6.0T1G PDF даташит
Спецификация ESD5Z6.0T1G изготовлена «ON Semiconductor» и имеет функцию, называемую «TVS Diode ( Rectifier )». |
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Детали детали
Номер произв | ESD5Z6.0T1G |
Описание | TVS Diode ( Rectifier ) |
Производители | ON Semiconductor |
логотип |
5 Pages
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ESD5Z2.5T1G Series,
SZESD5Z2.5T1G Series
Transient Voltage
Suppressors
Micro−Packaged Diodes for ESD Protection
The ESD5Z Series is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time, make these
parts ideal for ESD protection on designs where board space is at a
premium. Because of its small size, it is suited for use in cellular
phones, portable devices, digital cameras, power supplies and many
other portable applications.
Specification Features:
• Low Clamping Voltage
• Small Body Outline Dimensions:
0.047″ x 0.032″ (1.20 mm x 0.80 mm)
• Low Body Height: 0.028″ (0.7 mm)
• Stand−off Voltage: 2.5 V − 12 V
• Peak Power up to 240 Watts @ 8 x 20 ms Pulse
• Low Leakage
• Response Time is Typically < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• IEC61000−4−2 Level 4 ESD Protection
• IEC61000−4−4 Level 4 EFT Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
http://onsemi.com
SOD−523
CASE 502
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
XX
1 G2
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
ESD5ZxxxT1G
SOD−523
Pb−Free
3,000 /
Tape & Reel
SZESD5ZxxxT1G
SOD−523
Pb−Free
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 12
1
Publication Order Number:
ESD5Z2.5T1/D
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ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IEC 61000−4−2 (ESD)
Contact
Air
kV
±30
±30
IEC 61000−4−4 (EFT)
40 A
ESD Voltage
Per Human Body Model
Per Machine Model
kV
16 V
400
Total Power Dissipation on FR−4 Board (Note 1) @ TA = 25°C
°PD° 500 mW
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Lead Solder Temperature − Maximum (10 Second Duration)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2.
See Application Note AND8308/D for further description of survivability specs.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IF Forward Current
VF Forward Voltage @ IF
Ppk Peak Power Dissipation
C Max. Capacitance @VR = 0 and f = 1 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
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ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
ESD5Z2.5T1G
ESD5Z3.3T1G
ESD5Z5.0T1G
VRWM IR (mA)
(V) @ VRWM
VBR (V)
@ IT
(Note 2)
IT
VC (V)
@ IPP =
5.0 A†
Device
Marking
ZD
ZE
ZF
Max
2.5
3.3
5.0
Max
6.0
0.05
0.05
Min mA
4.0 1.0
5.0 1.0
6.2 1.0
Typ
6.5
8.4
11.6
VMCax(VI)PP@†
Max
10.9
14.1
18.6
(IAP)P†
(PWp)k†
C
(pF)
VC
Per
IEC61000−4−2
Max Max Typ
(Note 3)
11.0 120 145 Figures 1 and 2
11.2 158 105
See Below
(Note 4)
9.4 174 80
ESD5Z6.0T1G
ZG 6.0 0.01
6.8 1.0 12.4
20.5 8.8 181 70
ESD5Z7.0T1G
ZH 7.0 0.01
7.5 1.0 13.5
22.7 8.8 200 65
ESD5Z12T1G
ZM 12 0.01 14.1 1.0 17
25 9.6 240 55
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
* Include SZ-prefix devices where applicable.
†Surge current waveform per Figure 5.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. ESD5Z5.0T1G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
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Номер в каталоге | Описание | Производители |
ESD5Z6.0T1 | TVS Diode ( Rectifier ) | ON Semiconductor |
ESD5Z6.0T1G | TVS Diode ( Rectifier ) | ON Semiconductor |
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