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Datasheet BUZ54 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BUZ54 | Power MOS Transistor Cs
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, Una.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
BUZ54
PowerMOS Transistor
GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode |  NJS | transistor |
| 2 | BUZ54 | Trans MOSFET N-CH 1KV 2.5A 3-Pin(3+Tab) TO-220AB |  New Jersey Semiconductor | mosfet |
| 3 | BUZ54A | Power MOS Transistor |  Philips | transistor |
| 4 | BUZ54A | Trans MOSFET N-CH 1KV 2.5A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor | mosfet |
BUZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET ®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, H  STMicroelectronics mosfet | | |
| 2 | BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50 V
ID
23 A
RDS(on)
0.07 Ω
Package TO-220 AB
Ordering Code C67078-S1300-A2
Maximum Ratings Parameter Continuous drain current Symbol Valu  Siemens Semiconductor Group transistor | | |
| 3 | BUZ10 | Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor mosfet | | |
| 4 | BUZ100 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Package TO-220 AB
Orde Siemens Semiconductor Group transistor | | |
| 5 | BUZ100L | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) BUZ 100L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S
Type BUZ 100L
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Pac Siemens Semiconductor Group transistor | | |
| 6 | BUZ100S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) BUZ 100 S
SPP77N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 77 A
RDS(on) 0.015 Ω
Package
Ordering Code
BUZ 100 S
TO-220 AB
Q67 Siemens Semiconductor Group transistor | | |
| 7 | BUZ100SL | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) BUZ 100 SL
SPP70N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 70 A
RDS(on) 0.018 Ω
Package
Ordering Code
BUZ 100 Siemens Semiconductor Group transistor | |
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