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PDF STP8444 Data sheet ( Hoja de datos )
| Número de pieza | STP8444 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STP8444 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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STB/P8444
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
40V 80A 4.8 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-263 Package.
D
G
S
STB SERIES
TO-263(DD-PAK)
G
D
S
STP SERIES
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a
TC=25°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Limit
40
±20
80
264
306
62
-55 to 150
1.8
62.5
Units
V
V
A
A
mJ
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Mar,26,2008
www.samhop.com.tw
1 page  
STB/P8444
Ver 1.0
15V
VDS L
RG
20V
tp
D.U.T
IAS
0.01
DR IVE R
+
-
VDD
Unclamped Inductive Test Circuit
Figure 13a.
V(BR )DS S
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
2
1
D=0.5
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
0.1
S quare Wave P uls e Duration (ms ec)
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
1
F igure 14. Normalized T hermal T rans ient Impedance C urve
10
Mar,26,2008
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP8444.PDF ] | |
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