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STU10N25 PDF даташит

Спецификация STU10N25 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STU10N25
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STU10N25 Даташит, Описание, Даташиты
STU10N25
Sa mHop Microelectronics C orp.
STD10N25Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
250V 9A 258 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C
TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
250
±20
9
5.7
25
20
42
17
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,24,2013
www.samhop.com.tw









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STU10N25 Даташит, Описание, Даташиты
STU10N25
STD10N25
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=200V , VGS=0V
VGS= ±20V , VDS=0V
250
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4.5A
VDS=10V , ID=4.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=125V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=125V,ID=1A,VGS=10V
VDS=125V,ID=1A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4.5A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Typ Max Units
1
±100
V
uA
nA
2.2 3
V
206 258 m ohm
6.6 S
1610
78
58
pF
pF
pF
37 ns
29 ns
55 ns
14 ns
22 nC
2.8 nC
7.4 nC
0.81 1.3
V
Oct,24,2013
2 www.samhop.com.tw









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STU10N25 Даташит, Описание, Даташиты
STU10N25
STD10N25
15
VGS=10V
12 VGS=6V
9 VGS=5V
6
3
VGS=4V
0
0 1234 5
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
600
500
400
300
V GS =10V
200
100
1
0.1 3 6 9 12 15
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
10
8
6
Tj=125 C
-55 C
4
25 C
2
0
0 123456
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
2.2
V G S =10V
1.9 ID=4.5A
1.6
1.3
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=10mA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,24,2013
3 www.samhop.com.tw










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