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STD35N10 PDF даташит

Спецификация STD35N10 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STD35N10
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STD35N10 Даташит, Описание, Даташиты
STU35N10
Sa mHop Microelectronics C orp.
STD35N10Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
21 @ VGS=10V
100V
35A
30 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a c
TC=25°C
TC=70°C
IDM -Pulsed c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
100
±20
35
28
102
196
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Apr,30,2014
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STD35N10 Даташит, Описание, Даташиты
STU35N10
STD35N10
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=17.5A
VGS=4.5V , ID=15A
VDS=10V , ID=17.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=17.5A,VGS=10V
VDS=50V,ID=17.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=8A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
1.6 3
V
21 26 m ohm
30 41 m ohm
29 S
2490
231
128
pF
pF
pF
50 ns
43 ns
75 ns
54 ns
33 nC
3.6 nC
12 nC
0.78 1.3
V
Apr,30,2014
2 www.samhop.com.tw









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STD35N10 Даташит, Описание, Даташиты
STU35N10
STD35N10
40
VGS=10V
32
24
VGS=4.5V
VGS=5V
VGS=4V
16 VGS=3.5V
8 VGS=3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
60
50
40
V GS =4.5V
30
20
V GS =10V
10
1
1 8 16 24 32 40
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
30
24
18
Tj=125 C
12
25 C -55 C
6
0
0123456
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
2.2
V G S =10V
1.9
I D =1 7 . 5 A
1.6
1.3
V G S =4.5V
1.0 ID=15A
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Apr,30,2014
3 www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
STD35N10N-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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