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PDF AM2303E3VR Data sheet ( Hoja de datos )
| Número de pieza | AM2303E3VR | |
| Descripción | -30V P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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AiT Semiconductor Inc.
www.ait-ic.com
AM2303
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2303 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent RDS(ON) low gate charge and
-30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V
-30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V
-30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V
Super high density cell design for extremely low
operation gate as 2.5V.
RDS(ON)
Exceptional on-resistance and Maximum DC
This device is suitable for use as a load switch or
other general applications.
current capability
Available in SOT-23 Package
The AM3401 is available in SOT-23 Package
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM2303E3R
E3
AM2303E3VR
Note
V: Halogen free Package
R: Tape & Reel
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
APPLICATIONS
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
DC/DC Converter
Load Switch
P CHANNEL MOSFET
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM2303
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
25℃, unless noted
1. Output Characteristics
2. Drain-Source On Resistance
3. Drain Source On Resistance
4. Transfer Characteristics
5. Gate Charge
6. Drain Source Resistance
REV1.2
-MAR 2011 RELEASED, JUN 2012 UPDATED -
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM2303E3VR.PDF ] | |
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