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STU03L07 PDF даташит

Спецификация STU03L07 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STU03L07
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STU03L07 Даташит, Описание, Даташиты
STU03L07
Sa mHop Microelectronics C orp.
STD03L07Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
228 @ VGS=10V
70V 9A
267 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
70
±20
9
7.2
26
12
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Apr,10,2014
www.samhop.com.tw









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STU03L07 Даташит, Описание, Даташиты
STU03L07
STD03L07
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=56V , VGS=0V
VGS= ±20V , VDS=0V
70
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4.5A
VGS=4.5V , ID=4A
VDS=10V , ID=4.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=35V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=35V,ID=4.5A,VGS=10V
VDS=35V,ID=4.5A,VGS=4.5V
VDS=35V,ID=4.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Drain current limited by maximum junction temperature.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
23V
182 228 m ohm
198 267 m ohm
14 S
480 pF
30 pF
22 pF
10.5 ns
10.2 ns
19 ns
8.2 ns
7.8 nC
4 nC
1.2 nC
2.2 nC
0.81 1.3
V
Apr,10,2014
2 www.samhop.com.tw









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STU03L07 Даташит, Описание, Даташиты
STU03L07
STD03L07
10
VGS=10V
8
VGS=4.5V
6
VGS=4V
VGS=3.5V
4
2 VGS=3V
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
480
400
320
240 V GS =4.5V
160 V GS =10V
80
0
0.1 2 4 6 8 10
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
8.0
6.4
4.8
Tj=125 C
-55 C
3.2
25 C
1.6
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.25
2.00
1.75
V G S =10V
I D =4 . 5 A
1.50
1.25
V G S =4.5V
ID=4A
1.00
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Apr,10,2014
3 www.samhop.com.tw










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