STU25L01 PDF даташит
Спецификация STU25L01 изготовлена «SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | STU25L01 |
Описание | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Производители | SamHop Microelectronics |
логотип |
7 Pages
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STU25L01Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (m ) Typ
100V
25A
35 @ VGS=10V
45 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
25
21
73
50
35
-55 to 175
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Apr,18,2012
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STU25L01
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=12.5A
VGS=4.5V , ID=11A
VDS=10V , ID=12.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=12.5A,VGS=10V
VDS=50V,ID=12.5A,VGS=4.5V
VDS=50V,ID=12.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
Typ Max Units
1
±100
V
uA
nA
2.0 3
V
35 42 m ohm
45 55 m ohm
22 S
1460
88
75
pF
pF
pF
25 ns
23 ns
66 ns
14 ns
26 nC
13 nC
2.6 nC
9.3 nC
0.79 1.3 V
Apr,18,2012
2 www.samhop.com.tw
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STU25L01
40
V GS =10V
32
V GS =4.5V
24 V GS =4.0V
16 V GS =3.5V
8
V GS =3.0V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
180
150
120
90
60 V GS =4.5V
30 V GS =10V
1
1 8 16 24 32 40
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
25
20
Tj = 125 C
15
-55 C
10
25 C
5
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0
1.8 V G S =10V
I D =1 2 . 5 A
1.6
1.4
1.2 V G S =4.5V
ID=11A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Apr,18,2012
3 www.samhop.com.tw
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STU25L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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