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STD03L01 PDF даташит

Спецификация STD03L01 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STD03L01
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STD03L01 Даташит, Описание, Даташиты
STU03L01
Sa mHop Microelectronics C orp.
STD03L01Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
0.9 @ VGS=10V
100V
2A
1.1 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
ESD Protected.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TC=25°C
TC=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
2
1.6
5.8
42
27
-55 to 150
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,03,2013
www.samhop.com.tw









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STD03L01 Даташит, Описание, Даташиты
STU03L01
STD03L01
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1A
VGS=4.5V , ID=0.9A
VDS=10V , ID=1A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=1A,VGS=10V
VDS=50V,ID=1A,
VGS=10V
100
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
Typ
2
0.72
0.81
3.5
200
28
17
20
19.5
178
46
4
1
1.4
0.88
Max Units
V
1 uA
±10 uA
3V
0.9 ohm
1.1 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.3 V
Jul,03,2013
2 www.samhop.com.tw









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STD03L01 Даташит, Описание, Даташиты
STU03L01
STD03L01
2.5
VGS=10V
2.0
VGS=4.5V
VGS=4V
1.5
VGS=3.5V
1.0
0.5
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
1.8
1.5
1.2
V GS =4.5V
0.9
0.6 V GS =10V
0.3
0
0.01 0.5 1 1.5 2.0 2.5
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
2.5
2.0
1.5
Tj=125 C
-55 C
1.0
25 C
0.5
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.25
2.00
1.75
V G S =10V
ID=1A
1.50
1.25
V G S =4.5V
I D =0 . 9 A
1.00
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,03,2013
3 www.samhop.com.tw










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