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STU606S PDF даташит

Спецификация STU606S изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STU606S
Описание N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STU606S Даташит, Описание, Даташиты
STU/D606SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.2
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
56 @ VGS=10V
60V 21A
68 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
60
±20
21
16.8
61
25
50
32
-55 to 150
2.5
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Dec,03,2012
www.samhop.com.tw









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STU606S Даташит, Описание, Даташиты
STU/D606S
Ver 1.2
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
60
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=10.5A
VGS=4.5V , ID=9.5A
VDS=20V , ID=10.5A
VDS=30V,VGS=0V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RGEN=3.3 ohm
VDS=30V,ID=10.5A,VGS=10V
VDS=30V,ID=10.5A,VGS=4.5V
VDS=30V,ID=10.5A,
VGS=10V
1.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1.7A
Notes
a.Drain current limited by maximum junction temperature.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
1.8 3.0 V
45 56 m ohm
50 68 m ohm
16 S
825 pF
72 pF
48 pF
13
12.5
38
6
13.5
6.3
1.6
3.4
ns
ns
ns
ns
nC
nC
nC
nC
0.79 1.3 V
Dec,03,2012
2 www.samhop.com.tw









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STU606S Даташит, Описание, Даташиты
STU/D606S
30
VGS=5V
24 VGS=10V
18
VGS=4V
VGS=3.5V
12
VGS=3V
6
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
120
100
80
60 VGS=4.5V
40 VGS=10V
20
1
1 6 12 18 24 30
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.2
20
16
25 C
12
8
4 T j=125 C
-55 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
V G S =4.5V
1.6 ID=9.5A
1.4
1.2 V G S =10V
I D =1 0 . 5 A
1.0
0.0
0 25 50 75 100 125 150
Tj, Junction Temperature(°C ) Tj(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
V DS =V G S
1.2 ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.3
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,03,2012
www.samhop.com.tw










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