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STD600S PDF даташит

Спецификация STD600S изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв STD600S
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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STD600S Даташит, Описание, Даташиты
SamHop Microelectronics Corp.
STU/D600SGreen
Product
Aug 25,2006
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) ( m W ) Max
60V 16A
55 @ VGS = 10V
70 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
GDS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @a Ta
-Pulsed b
Symbol
VDS
VGS
25 C
ID
70 C
IDM
Limit
60
20
16
10.7
30
Drain-Source Diode Forward Current a
IS
15
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Ta= 25 C
Ta=70 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PD
TJ, TSTG
R JC
R JA
50
35
-55 to 175
3
50
Unit
V
V
A
A
A
A
W
C
C /W
C /W









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STD600S Даташит, Описание, Даташиты
S T U/D600S
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA
IDSS VDS =48V, VGS =0V
IGSS VGS = 20V, VDS= 0V
60
V
1 uA
100 nA
VGS(th) VDS =VGS, ID = 250uA 1.0 1.8 3.0 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =8A
VGS =4.5V, ID= 4A
45 55 m ohm
50 70 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 5V, VGS = 10V
VDS = 10V, ID =8A
20
16
A
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
COSS
VDS =30V, VGS = 0V
f =1.0MHZ
CRSS
670 PF
72 PF
45 PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS c
3.2
ohm
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 30V
tr ID = 8 A
tD(O F F )
VGS = 10V
R GEN = 3.3 ohm
tf
13 ns
10 ns
25 ns
9 ns
Total Gate Charge
Qg VDS =30V, ID =8A,VGS =10V 14.2 nC
VDS =30V, ID =8A,VGS =4.5V
7
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =30V, ID = 8A
Qgd VGS =10V
2
1.7 nC
3.8 nC









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STD600S Даташит, Описание, Даташиты
S T U/D600S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is = 10A
Min Typ Max Unit
0.9 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
30
V GS =10V
24
18
V GS =4.5V
V GS =8V
V GS =3.5V
12
V GS =3V
6
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
120
100
80
60 V GS =4.5V
40
V GS =10V
20
1
1 6 12 18 24 30
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
20
16
25 C
12
8
4 T j=125 C
0
0 0.8
-55 C
1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
2.0
1.8
V G S =4.5V
1.6 ID=4A
1.4
1.2 V G S =10V
ID=8A
1.0
0.0
0
25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3










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